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TMBYV10-40FILM
SMALL SIGNAL SCHOTTKY DIODES
TMBYV 10-40SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTIONMetal to silicon rectifier diodes in glass case featur-
ing very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
August 1999 Ed: 1A
ABSOLUTE MAXIMUM RATINGS (limiting values)* Pulse test: tp ≤ 300μs δ < 2%.
THERMAL RESISTANCE1/4
* * Pulse test: tp ≤ 300μs δ < 2%.
ELECTRICAL CHARACTERISTICSSTATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
Fig. 1 : Forward current versus forward voltageat low level (typical values).
Fig. 2 : Forward current versus forward voltageat high level (typical values).
TMBYV10-40
Fig. 3 : Reverse current versus junctiontemperature.
Fig. 4 : Reverse current versus VRRM in percent.
Fig. 5 : Capacitance C versus reverse appliedvoltage VR (typical values)
Fig. 6 : Surge non repetitive forward current fora rectangular pulse with t â 10 ms.
3/4
TMBYV10-40
Fig. 7 : Surge non repetitive forward currentversus number of cycles.
Cooling method: by convection and conduction
Marking: ring at cathode end.
Weight: 0.139g
ORDERING CODE : TMBYV10-40 FILM
FOOT PRINT DIMENSIONS (Millimeter)
PACKAGE MECHANICAL DATAMELF Glass
. However, STMicroelectronics assumes no responsibility for
the or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces
all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without
express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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TMBYV10-40
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