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TLP759F
Photocoupler GaAlAs Ired + Photo .IC
TLP759F TOSHIBA Photocoupler GaAℓAs Ired + Photo−IC
TLP759F Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Transistor Invertor
The TOSHIBA TLP759F consists of a GaAℓAs high-output light
emitting diode and a high speed detector of one chip photo diode-
transistor. This unit is 8-lead DIP package.
TLP759F has no internal base connection, and a faraday shield
integrated on the photodetector chip provides an effective common
mode noise transient immunity.
So this is suitable for application in noisy environmental condition.
All parameters are tested to the specification of TLP759. Isolation voltage: 5000 Vrms (min.) Switching speed: tpHL = 0.3µs (typ.) tpHL = 0.5µs (typ.) (RL = 1.9 kΩ) TTL compatible UL recognized: UL1577, file no. E67349 Option (D4) type
VDE approved: DIN VDE0884 / 06.92 Certificate no. 83676
Maximum operating insulation: 1140VPK
Highest permissible over voltage: 6000VPK
(Note) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ” Creepage distance: 8.0mm
Clearance: 8.0mm
Insulation thickness: 0.4mm
Pin Configuration(top view) 1: N.C.
2: Anode
3: Cathode
4: N.C.
5: Emitter(GND)
6: Collector(output)
7: N.C.
8: VCC 5
Schematic VO SHIELD GND
VCC
ICC
VF
Unit in mm
Weight: 0.54g
