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TLP747GF
Photocoupler GaAs Ired & Photo-Thyristor
TLP747GF TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor
TLP747GF Office Machine
Switching Power Supply
The TOSHIBA TLP747GF consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747G.
(both condition and limits) Peak off−state voltage: 400V min. Trigger LED current: 15mA max. On−state current: 150mA max. UL recognized: UL1577, file no. E67349 BSI approved: BS EN60065: 1994 Certificate no. 7364 BS EN60950: 1992 Certificate no. 7365 SEMKO approved: SS4330784, certificate no. 9325163 no. 9522142 Isolation voltage: 4000Vrms min. Option (D4) type
VDE approved: DIN VDE0884 / 06.92, Certificate no.74286, 91808
Maximum operating insulation voltage: 890, 1130VPK
Highest permissible over voltage: 6000, 8000VPK
(Note) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ” Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.) Conforming safety standards:
DIN 57 804. VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
Pin Configuration (top view) 1 : ANODE
2 : CATHODE
3 : NC
4 : CATHODE
5 : ANODE
6 : GATE
Unit in mm
Weight: 0.42 g
