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TLP733-TLP734
Photocoupler GaAs IRed & Photo -Transistor
TLP733,TLP734 TOSHIBA Photocoupler GaAs Ired&Photo−Transistor
TLP733, TLP734 Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP733 and TLP734 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP734 is no−base internal connection for high−EMI environments. Collector−emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.)
Rank GB: 100% (min.) UL recognized: UL1577, file no. E67349 BSI approved: BS EN60065: 1994 Certificate no. 7364
BS EN60950: 1992 Certificate no. 7365 SEMKO approved: SS4330784
Certificate no. 9325163, 9522142 Isolation voltage: 4000 Vrms (min.) Option (D4) type
VDE approved: DIN VDE0884 / 06.92, Certificate no. 74286, 91808
Maximum operating insulation voltage: 630, 890 VPK
Highest permissible over voltage: 6000, 8000 VPK
(Note) When a VDE0884 approved type is needed,
please designate the “Option (D4)” 7.62 mm pich 10.16 mm pich
standard type TLP×××F type Creepage distance : 7.0 mm (min.) 8.0 mm (min.)
Clearance : 7.0 mm (min.) 8.0 mm (min.)
Internal creepage path : 4.0 mm (min.) 4.0 mm (min.)
Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)
Pin Configurations (top view) 1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Base
TLP733
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Nc
TLP734
Unit in mm
Weight: 0.42 g
