TLP732 ,Photocoupler GaAs IRed & Photo -TransistorTLP731,TLP732 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP731,TLP732 Office Machine Un ..
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TLP734F ,Photocoupler GaAs IRed & Photo -TransistorTLP733F,TLP734F TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP733F,TLP734F Office Machin ..
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TLP731-TLP731.-TLP732-TLP732.
Photocoupler GaAs IRed & Photo -Transistor
TLP731,TLP732 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP731,TLP732 Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP731 and TLP732 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP package.
TLP732 is no−base internal connection for high−EMI environments. Collector−emitter voltage: 55V (min.) Current transfer ratio: 50% (min.)
Rank GB: 100% (min.) UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065: 1994 Certificate No. 6617
BS EN60950: 1992 Certificate No. 7366
Isolation voltage: 4000Vrms (min.) Option (D4) type
VDE approved: DIN VDE0884 / 08.87, Certificate No. 65640
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
(Note) When a VDE0884 approved type is needed,
please designate the “Option (D4)” 7.62mm pich 10.16mm pich
standard type (LF2) type Creepage distance : 7.0mm (min.) 8.0 mm (min.)
Clearance : 7.0 mm (min.) 8.0 mm (min.)
Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)
Pin Configurations (top view) Unit in mm
Weight: 0.35 g