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TLP705
Photocoupler (photo-IC output)
TLP705
Unit in mm
Weight: 0.26 g (typ.)
4.58±0.25
4.0
+0.25 −
0.20
9.7±0.3
6.8±0.25
0.4±0.1
1.27±0.2 1.25±0.25
7.62±0.25
3.65
+0.15 −
0.25
0.25±
1 2 3
6 5 4
11-5J1
TOSHIBA 11-5J1
0.05
+0.10 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP705 Plasma Display Panel.
Industrial Inverter
IGBT/Power MOS FET Gate Drive
TLP705 consists of a GaAℓAs light emitting diode and a integrated
photodetector.
This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8pin DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705 is capable of “direct” gate drive of lower Power IGBTs. Peak output current : ±0.45 A (max) Operating frequency : 250kHz (max) Guaranteed performance over temperature : −40 to 100°C Supply current : 3mA (max) Power supply voltage : 10 to 20 V Threshold input current : IFLH = 8 mA (max)
• Switching time (tpLH / tpHL) : 200 ns (max) Common mode transient immunity :±10 kV/μs(min) Isolation voltage : 5000 Vrms(min) UL Recognized :UL1577, File No.E67349 Construction Mechanical Rating
• Option (D4)
TÜV approved : EN60747-5-2
Certificate No. R50033433
Maximum operating insulation voltage : 890 Vpk
Highest permissible over voltage : 8000 Vpk
( Note ) When a EN60747-5-2 approved type is needed,
please designate the “Option(D4)”
Truth Table between pins 6 and 4. (See Note 6.)
VCC
VO
GND
(Tr1)
ICC
IO
SHIELD
1: ANODE
2: NC
3: CATHODE
4: GND
5: VO ( OUTPUT )
6: VCC
Pin Configuration (Top View)
Schematic
