TLP666JF ,Photo Coupler GaAs Ired & Photo -TriacTLP666JF TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP666JF Office Machine Unit in mmHousehol ..
TLP668J ,Photocoupler GaAlAs Ired & Photo-TriacPin Configuration (top view) 1 6 23 4 ZC 1 : Anode 2 : Cathode 3 : NC 4 : Terminal 1 6 : Terminal ..
TLP700 ,Photocoupler (photo-IC output)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
TLP701 ,Photocoupler (photo-IC output)TLP701 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP701 Industrial inverters Unit in mmInverter ..
TLP705 ,Photocoupler (photo-IC output)TLP705 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP705 Unit in mm 4.58±0.25 6 5 4 Plasma Di ..
TLP715 ,Photocoupler (photo-IC output)TLP715 TOSHIBA PHOTOCOUPLER GaAℓAs IRED & PHOTO-IC TLP715 Isolated Bus Drivers Unit in mm4.58±0 ..
TMS320C6455BZTZ , Fixed-Point Digital Signal Processor SPRS276M –MAY 2005–REVISED MARCH 2012TMS320C6455 Fixed-Point Digital Signal ProcessorCheck for Sam ..
TMS320C6455BZTZ2 , Fixed-Point Digital Signal ProcessorFeatures12– 1.25-, 2.5-, 3.125-Gbps Link Rates• High-Performance Fixed-Point DSP (C6455)– Message P ..
TMS320C6455-BZTZ7 , Fixed-Point Digital Signal Processor SPRS276M –MAY 2005–REVISED MARCH 2012The C6455 DSP integrates a large amount of on-chip memory org ..
TMS320C6455BZTZA , Fixed-Point Digital Signal Processor1.1 CTZ/GTZ/ZTZ BGA Package (Bottom View)Figure 1-1 shows the TMS320C6455 device 697-pin ball grid ..
TMS320C6474FZUNA , Multicore Digital Signal Processor SPRS552H–OCTOBER 2008–REVISED APRIL 20111.2 DescriptionThe TMS320C64x+ DSPs (including the TMS320C ..
TMS320C6701GJC150 ,Floating-Point Digital Signal ProcessorFeatures− Hardware Support for IEEESingle-Precision Instructions 16-Bit Host-Port Interface (HPI) ..
TLP666JF
Photo Coupler GaAs Ired & Photo -Triac
TLP666JF
TOSHIBA Photocoupler GaAs Ired & Photo−Triac
TLP666JF Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
The TOSHIBA TLP666JF consists of a zero voltage crossing turn−on
photo−triac optically coupled to a gallium arsenide infrared emitting
diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP666J.
(both condition and limits) Peak off−state voltage: 600 V (min.) Trigger LED current: 10 mA (max.) On−state current: 100 mA (max.) UL recognized: UL1577, file No. E67349 Isolation voltage: 5000 Vrms (min.) Option (D4) type
VDE approved: DIN VDE0884 / 08.87, Certificate No. 68383
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
(Note 1) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ” Structural parameter
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Insulation thickness: 0.5mm (min.) Conforming safety standards:
DIN 57 804 / VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
Pin Configurations (top view) 1 : Anode
2 : Cathode
3 : NC
4 : Terminal 1
6 : Terminal 2
Unit in mm
Weight: 0.44g