TLP629 ,Photocoupler GaAs Ired & Photo -TransistorTLP629,TLP629−2,TLP629−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP629,TLP629−−−−2,TLP ..
TLP629-2 ,Photocoupler GaAs Ired & Photo -TransistorTLP629,TLP629−2,TLP629−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP629,TLP629−−−−2,TLP ..
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TLP632 ,Photocoupler GaAs IRed & Photo -TransistorTLP631,TLP632 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP631,TLP632 Programmable Contro ..
TLP633 ,GaAs IRED AND PHOTO-TRANSISTOR
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TMS320C6412AGNZ5 ,Fixed-Point Digital Signal Processor 548-FCBGA Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
TLP629-TLP629-2
Photocoupler GaAs Ired & Photo -Transistor
TLP629,TLP629−2,TLP629−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP629,TLP629−−− −2,TLP629−−− −4
Telecommunication
Office Machine
Telephone Use Equipment
The TOSHIBA TLP629, −2, and −4 consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP629−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP629−4 provides four isolated channels in a sixteen plastic
DIP. This is suitable for application of DC input current up to 150mA. IF maximum rating: 150mA Collector−emitter voltage: 55V (min.) Current transfer ratio: 25% (min.) (IF=20mA) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577, file no. E67349
Pin Configurations (top view) Weight: 0.26 g
Weight: 0.54 g
Weight: 1.1 g
Unit in mm
