TLP621-3 ,Photocoupler
TLP621-3 ,Photocoupler
TLP621-4 ,Photocoupler GaAs Ired & Photo -TransistorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP624 ,Photocoupler GaAs Ired & Photo -TransistorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624-2 ,5V; 50mA low input current phototransistor optically coupled isolatorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit1 ..
TLP624-3 , 12PIN DIP 3-CHANNELS TYPE
TMS320C44PDB50 ,Digital Signal Processors 'NRND' (Not Recommended for New Designs)
TMS320C44PDB60 ,Digital Signal Processors 'NRND' (Not Recommended for New Designs)
TMS320C50PGEA57 ,Digital Signal Processors 144-LQFP
TMS320C50PQA ,16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=2K, 5.0V
TMS320C51PQ57 ,16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=8K, 5.0V, 57 MHz
TMS320C51PQ80 ,16-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=8K, 5.0V, 80 MHz
TLP620-3-TLP621-3
Photocoupler
TOSH I BA TLP620(D4)SERlES,TLP621(D4)SERlES,TLP750(D4)SERlES
TOSHIBA PHOTOCOUPLER
TLP620(D4)SERIES, TLP621(D4)SERIES, TLP750(D4)SERIES
ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION .' (D4)
Types '. TLP620, TLP620-2, TLP620-3, TLP620-4, TLP621, TLP621-2, TLP621-3, TLP621-4, TLP750,
TLP751
Type designations for 'Option : (D4)’, which are tested under VDE0884 requirements.
Ex. : TLP621 (D4-GR-LF2) D4 : VDE0884 option
GR : CTR rank
LF2 : standard lead bend
Note : Use Toshiba standard type number for safety standard application.
Ex. TLP621 (D4-GR-LF2) - TLP621
VDE0884 ISOLATION CHARACTERISTICS
DESCRIPTION SYMBOL RATING UNIT
Application Classification
(DIN VDE0109/12.83, Table 1)
for rated mains voltageS300Vrms I-IV
for rated mains voltageS600Vrms I-III
Climatic Classification
(DIN IEC68 Teil 1/09.80) 55/100/ 21 -
Pollution Degree (DIN VDE0109/ 12.83) 2 -
Maximum Operating Insulation Voltage VIORM 890 Vpk
Input to output Test Voltage, Method A
Vpr=1.5>
tp = 60s, Partial Discharge < 5110
Input to output Test Voltage, Method B
Vpr=1.875XVIORM, 100% Production Test Vpr 1670 Vpk
tP=1s, Partial Discharge<5pC
Highest Permissible Overvoltage
(Transient Overvoltage, tpr=10s) VTR 8000 Vpk
Safety Limiting Values (Max. permissible ratings in
case of fault, also refer to thermal derating curve)
Current (Input current IF, PSi=0) Isi 300 mA
Power (Output or Total Power Dissipation) Psi 500 mW
Temperature Tsi 150 T
Insulation Resistance at Tsi, VIo=500V Rsi 2 109 n
1 2001-06-01
TOSH I BA TLP620(D4)SERlES,TLP621(D4)SERlES,TLP750(D4)SERlES
INSULATION RELATED SPECIFICATIONS
Minimum Creepage Distance (*) Cr 6.4mm
Minimum Clearance (*) Cl 6.4mm
Minimum Insulation Thickness ti 0.4mm
Comperative Tracking Index CTI 175
(DIN IECll2/VDE0303, Part 1) (VDE0109/12.83 Group flla)
((*) in accordance with DIN VDE0109/ 12.83, Table 2, & 4)
(*1) If a printed circuit is incorporated, the creepage distance and clearance may be
reduced below this value (e. g. at a standard distance between soldering eye centres
of 7.5mm). If this is not permissible, the user shall take suitable measures.
(*2) This photocoupler is suitable for 'safe electrical isolation' only within the safety
limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
TLP620, 620-2, 620-3, 620-4
TLP621, 621-2, 621-3, 621-4 TLP750, 751
VDE Test sign .' £31.53?) JI Eroduct 4
Marking on packing 0884 0884
for VDE0884
Marking Example : 4 pin Type Others
5P or r SP or S"
iv,-',"- gd(i-eV,
l? i=Im- Lot No. :1 - Lot No.
Pr=h- TYPE NAME WITHOUT "TL" TLPE“ TYPE NAME k M ki
p Ch- CTR or IFT Rank Marking q =-- CTR or IFT Ran ar mg
Ll L] 1.15%
[Ll mark for option (D4) - mark for option (D4)
lpin indication - lpin indication
2 2001-06-01
TOSH I BA TLP620(D4)SERlES,TLP621(D4)SERlES,TLP750(D4)SERlES
Figure 1 Partial discharge measurement procedure according to VDEO884
Destructive test for qualification and sampling tests.
Method A VINITIAL (6kV)
(for type and sampling tests,
destructive tests)
t1, t2 =1 to 10s
t3, t4 =1s
tp (Measuring time for
partial discharge) =50s
tb =62s
tini =10s
t1 I tini
Figure 2 Partial discharge measurement procedure according to VDEO884
Non-destructive test for 100% inspection.
Method B V Vpr(1kV)
(for sample test, non- i i VIORM (890V)
destructive test) __: --------- l __/___
t3, t4 =0.ls i 5
tP(Measuring time for l l
partial discharge) =1s E E
',t3' tb 't l
Figure 3 Dependency of maximum safety ratings on ambient temperature
____I. 500 1000 P.
300 600
200 400
100 200
O 25 50 75 100 125 150 175
Ta (°C)
3 2001-06-01
TOSH I BA TLP620(D4)SERlES,TLP621(D4)SERlES,TLP750(D4)SERlES
RESTRICTIONS ON PRODUCT USE
000707EBC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
O The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-06-01
www.ic-phoenix.com
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