TLP570 ,Photocoupler GaAs IRed & Photo .TransistorTLP570,TLP571 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP570,TLP571 Programmable Cont ..
TLP571 ,Photocoupler GaAs IRed & Photo .TransistorElectrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.UnitForwa ..
TLP571 ,Photocoupler GaAs IRed & Photo .TransistorTLP570,TLP571 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP570,TLP571 Programmable Cont ..
TLP590B ,Photocoupler GaAlAs Ired & Photo .Diode Array
TLP590B ,Photocoupler GaAlAs Ired & Photo .Diode Array
TLP597G ,Photocoupler Photo Relay
TMS320BC51PQ57 ,Digital Signal Processors 132-BQFP
TMS320BC51PQ57 ,Digital Signal Processors 132-BQFP
TMS320BC51PQ80 ,Digital Signal Processors 132-BQFP
TMS320BC51PQA-57 ,Digital Signal Processors 132-BQFP -40 to 85
TMS320BC52PZ100 ,Digital Signal Processors 100-LQFP
TMS320BC52PZ80 ,Digital Signal Processors 100-LQFP
TLP570-TLP571
Photocoupler GaAs IRed & Photo .Transistor
TLP570,TLP571 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP570,TLP571 Programmable Controllers
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP570 and TLP571 consist of a darlington connected
photo−transistor optically coupled to a gallium arsenide infrared
emitting diode in a six lead plastic DIP package.
TLP570 is no−base internal connection for high−EMI environments. Collector−emitter voltage: 35V (min.) Current transfer ratio: 1000% (min.) Isolation voltage: 2500Vrms (min.) UL recognized: UL1577, file no. E67349
Pin Configurations (top view) Unit in mm