TLP521 ,5V; 50mA optically coupled isolatorTOSHIBA TLP521-1,TLP521-2,TLP521-4AC/DC-INPUT MODULE 4 3 TLP521-1SOLID STATE RELAY :'iiiThe TOSHIBA ..
TLP521-1 ,Photocoupler GaAs Ired & Photo -TransistorTLP521−1,TLP521−2,TLP521−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP521−−−−1,TLP521−− ..
TLP521-1 ,Photocoupler GaAs Ired & Photo -TransistorTLP521−1,TLP521−2,TLP521−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP521−−−−1,TLP521−− ..
TLP521-1 ,Photocoupler GaAs Ired & Photo -TransistorTLP521−1,TLP521−2,TLP521−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP521−−−−1,TLP521−− ..
TLP521-1 ,Photocoupler GaAs Ired & Photo -TransistorPin Configurations (top view) TLP521-1 TLP521-2 TLP521-4 1 4 1 81 16TOSHIBA 11−10C4 2 3 2 7 152We ..
TLP521-1 ,Photocoupler GaAs Ired & Photo -TransistorElectrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min Typ. MaxUnitForward ..
TMS27C128-25JL ,131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70
TMS27C128JL ,131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP
TMS27C128JL ,131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP
TMS27C128JL ,131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP
TMS27C240 ,16-BIT PROGRAMMABLE READ-ONLY MEMORIES
TMS27C240-12JL ,4 194 304-Bit Programmable Read-Only Memory 40-CDIP 0 to 70
TLP521
5V; 50mA optically coupled isolator
TOSHIBA TLP521-1,TLP521-2,TLP521-4
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP521 Mi tr TLP521 A2, TLP521 M,
PROGRAMMABLE CONTROLLERS Unit in mm
AC/DC-INPUT MODULE 541 r), TLP521-1
SOLID STATE RELAY 1%
The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor 4.531025% 7.521025
optically coupled to a gallium arsenide infrared emitting diode. _tra'
The TLP521-2 offers two isolated channels in an eight lead plastic #3
DIP package, while the TLP521-4 provides four isolated channels in 1.22mi L "g.
a sixteen plastic DIP package. 0-5104 72"
2.541025 N
0 Collector-Emitter Voltage : 55 V (min)
TOSHIBA 11-5B2
0 Current Transfer Ratio .' 50% (min) .
W h .' .26
Rank GB .. 100% (min) e1g t 0 g
0 Isolation Voltage : 2500 Vrms(min) JI, J, 4 1% TLP521-2
0 UL Recognized 'si'
made in Japan : UL1577, File No. E67349 .1 LL, J U, g
made in Thailand : UL1577, File No. E152349 l 2 3 4 m
9.661025 'is? 7.622025
PIN CONFIGURATIONS (TOP VIEW) F,,''.
TLP521-1 TLP521-2 TLP521-4 1 2 1015 4?
' . 'G 02523315
rf-'-'---"''-'?
1E3 4 1E3 8 1E3 a 16 0-510-Li. g CD
=i] =i] =i] 2.541025 'i, " 7.85-s 8.80 F
" :l 3 " a 7 " a 15 n-mc
TOSHIBA 11-1OC4
1 :ANODE 3E " 3|: :14 . .
2 : CATHODE Fi] Fi] Weight . 0.54g
3 : EMITHER 4': Cl 5 4': Cl 13 1615 i; g fl, TLP521-4
4 : OLLE TOR _ E F',
1,3 :ANODE " 112 C)i',''i1i',',rr g
2, 4: CATHODE 32< 1 2 6 7 a
5, 7 : EMITTER 6E Cl 11 'iii
6, 8 : COLLECTOR 19.82t0.25 .1 tri 7.621025
7E , 310 Iii? ii' All
=--tf astonm i. : I-a-b-o-s-H
8: Cl 9 25410.25 1.210.15E 7.85-8.80
1, 3, 5, 7 I ANODE it-zoAs
2, 4, 6, 8 .' CATHODE TOSHIBA 11-20A3
9, 11, 13, 15 : EMITTER .
10, 12, 14, 16 : COLLECTOR Weight : 1.1g
000707EBC2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a mal unction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to roperty.
In developing your desi ns, please ensure that TOSHIBA products are used within speci ied operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
0 The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury CUnintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
2000-08-28 1/8
TOSHIBA TLP521-1,TLP521-2,TLP521-4
MAXIMUM RATINGS(Ta = 25°C)
CHARACTERISTIC SYMBOL RATING
TLP521-1 fy2ii11e UNIT
Forward Current IF 70 50 mA
Forward Current Derating AIF/ "C -0.93 (Ta 2 50°C) -0.5 (Ta 2 25°C) mA/ "C
a Pulse Forward Current IFP 1 (100 [1 pulse, 100 pps) A
’4 Reverse Voltage VR 5 V
Junction Temperature Tj 125 "C
Collector-Emi; Voltage VCEO 55 V
Emitter-Collector Voltage VECO 7 V
('i2i',) Collector Current IC 50 mA
'i, 80g:::::tfower Dissipation PC 150 100 mW
WI Collector Power Dissi ation o o
© Derating (1 Circuit, '1: 3 25°C) APC/ C -1.5 -1.0 mW/ C
Junction Temperature Tj 125 "C
Storage Temperature Range Tstg -55--125 "C
Operating Temperature Range Topr -55--100 "C
Lead Soldering Temperature Tsol 260 (10 s) "C
Total Package Power Dissipation PT 250 150 mW
Total Packa e Power Dissi ation C) 0
Derating (TE; 25°C) p APT/ C -2.5 -1.5 mW/ C
Isolation Voltage BVS 2500 (AC, 1min., R.H. s 60%) (Note 1) Vrms
(Note 1) : Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL Min Typ. Max UNIT
Supply Voltage VCC - 5 24 V
Forward Current IF - 16 25 mA
Collector Current IC - 1 10 mA
Operating Temperature Topr -25 - 85 "C
000707EBC2'
O Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or
pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the
products with other industrial waste or with domestic garbafge.
O The products described in this document are subject to the oreign exchange and foreign trade laws.
tt The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
2000-08-28 2/8
TOSHIBA
TLP521-1,TLP521-2,TLP521-4
CURRENT TRANSFER RATIO (%)
CLASSI- (10/ IF) MARKING OF
TYPE FICATION (*1) IF = 5mA, VCE = 5V, Ta = 25°C CLASSIFICATION
Min Max
A 50 600 BLANK, Y, Y'', G, G'', B, B'', GB
Rank Y 50 150 Y, yr'
TLP521 Rank GR 100 300 G, G"
Rank BL 200 600 B, B“I
Rank GB 100 600 G, G", B, B", GB
TLP521-2 A 50 600 BLANK, GR, BL, GB
TLP521-4 Rank GB 100 600 GR, BL, GB
*1 : Ex. Rank GB .' TLP521-1(GB)
(Note) : Application type name for eertifieation test, please use standard product type name, i.e.
TLP521-1(GB) .. TLP521-1, TLP521-2(GB) '. TLP521-2
2000-08-28 3/8
TOSHIBA
TLP521-1,TLP521-2,TLP521-4
INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
© Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V
E Reverse Current IR VR = 5 V - - 10 PA
Capacitance CT V = 0, f = 1 MHz - 30 - pF
Collector-Emi;
Breakdown Voltage V(BR) CEO IC - 0.5mA 55 - - V
Emitter-Collector
O = - -
t Breakdown Voltage V(BR)ECO IE 0.1mA 7 V
V = 24 V - 10 100 A
E Collector Dark Current ICEO CE n
© VCE = 24 V, Ta = 85°C - 2 50 PA
Capacitance - -
(Collector to Emitter) CCE V - o, f - 1 MHz - 10 - pF
COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
. IF = 5mA, VCE = 5V 50 - 600
Current Transfer Ratio IC/IF Rank GB 100 - 600 %
I = 1 mA V = 0.4V - 60 -
Saturated CTR I /I F , CE R
C F (sat) Rank GB 30 - - 0
I = 2.4 mA,I = 8 mA - - .
Collector-Emitter V C F 0 2 0 4 V
Saturation Voltage CE (sat) IC = 0.2 mA,IF = 1 mA - . -
Rank GB - - 0.4
ISOLATION CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Capacitance - -
(Input to Output) CS VS - o, f - 1 MHz - 0.8 - pF
Isolation Resistance RS VS = 500 V, R.H. s 60% - 1011 - n
AC, 1 minute 2500 - -
. . . Vrms
Isolation Voltage BVS AC, 1 second, In oil - 5000 -
DC, 1 minute, in oil - 5000 - Vdc
2000-08-28 4/8
TOSHIBA TLP521-1,TLP521-2,TLP521-4
SWITCHING CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Rise Time tr - 2 -
Fall Time tf VCC = 10V - 3 -
Turn-on Time ton IC = 2mA - 3 - ps
Turn-off Time toff RL = 100 ft - 3 -
Turn-on Time tON . - 2 -
Storage Time ts RL = IS k0 (Fig.1) - 15 - ps
Turn-off Time tOFF VCC = 5 V, IF = 16mA - 25 -
Fig.1 : SWITCHING TIME TEST CIRCUIT
IF Gt)." VCC IF [ [
l L ts I VCC
—0 VCE
V 4.5 V
CE 0.5 V
tON tOFF
2000-08-28 5/8
TOSHIBA TLP521-1,TLP521-2,TLP521-4
TLP521-2
TLP521-1 IF - Ta TLP521-4 I - Ta
100 100
IF (mA)
IF (mA)
ALLOWABLE FORWAFD CURRENT
ALLOWABLE FORWAFD CURRENT
-20 0 20 4O 60 80 100 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta CC)
TLP521-2
TLP521-1 PC - Ta 120TLP521-4 P - Ta
200 100
160 80
DISSIPATION pg
DISSIPATION PC (mW)
ALLOWABLE COLLECTOR POWER
ALLOWABLE CO LLECTOR POWER
2 20 0 20 40 60 80 100 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta CC) AMBIENT TEMPERATURE Ta CC)
TLP521-2
3000 3000
D PULSE WIDTH s 100 #5 © PULSE WIDTH g 100 Ms
53 Ta = 25'C g Ta = 25°C
5:; 1000 ',5t,uii" 1000
file 500 8" 500
M CL M I
300 300
D19 tNF-,
3% 100 $5 100
"si1'ij, 50 £3 50
g 30 g 30
10 _ _ - 0 10 _ _ _ 0
3 10 3 10 3 10 3 10 3 10 3 10 3 10 3 10
DUTY CYCLE RATIO DR DUTY CYCLE RATIO DR
2000-08-28 6/8
TOSHIBA
TLP521-1,TLP521-2,TLP521-4
FORWARD CURRENT [17 (mA)
PULSE FORWARD CURRENT IFP (mA)
COLLECTOR CURRENT
IF - "
0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE VF (V)
IFP - VFP
PULSE WIDTH s 10 Ms
REPETITIVE FREQUENCY
= 100 Hz
Ta = 25''C
o 0.4 0.8 1.2 1.6 2.0 2.4
PULSE FORWARD VOLTAGE VFP (V)
IC - VCE
Ta = 25''C
\ 50mA
N 15mA
PC (MAX.)
10 mA *s
IF=5mA
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD VOLTAGE TEMPERATURE
[CEO (#A) COEFFKHENT AVF/ATa (mV/%D
COLLECTOR DARK CURRENT
COLLECTOR CURRENT
nVF/nTa-IF
0.3 1 3 10 30
FORWARD CURRENT IF (mA)
ICEO - Ta
40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
IC - VCE
50 mA Ta = 25°C
IF=2mA
0.2 0.4 0.6 0.8 1.0 1.2 1.4
c0LLEcT0RaMITTER VOLTAGE VCE (V)
2000-08-28 7/8
TOSHIBA TLP521-1,TLP521-2,TLP521-4
IC - IF IC/IF - IF
100 500
50 2 300 SAMPLE A
30 if:
A 'i'i'Cu; 100
< 2" SAMPLE B
g 10 ar, 50
o SAMPLE A 9-5 30
g: SAMPLE B i? 10
n: 1 5
o 0.3 1 3 10 30 100
[i' 0.5 FORWARD CURRENT 1F (mA)
VCE(sat) - Ta
a 0.20
0.1 fi
0.05 :av 0.16
0.03 g g
0.3 1 3 10 30 100 'tii! 0.12
FORWARD CURRENT ll? (mA) 'cs
5ti 0.08
'fj,i,tj
(53> 0.04
-20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (T)
IC - Ta
RL - SWITCHING TIME
Ta = 25°C
500 IF = 16 mA
Il 300 VCC = 5V
F v 100
b' 2 50
ttt 'G'
Fl, g 30
f?, z:
:57] t 10
-20 0 20 40 60 80 100 1 3 10 30 100 300
AMBIENT TEMPERATURE Ta (°C) LOAD RESISTANCE RL (km
2000-08-28 8/8
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