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TLP507A
PHOTO-INTERRUPTER INFRARED LED + PHOTODARLINGTON TRANSISTOR
TOSHIBA TLP507A
TOSHIBA PHOTO-INTERRUPTER INFRARED LED+PHOTODARLlNGTON TRANSISTOR
TLP507A
HIGH-POWER AMPLIFIER APPLICATIONS
AUTOMATIC CONTROL UNITS
POSITION AND ROTATIONAL SPEED SENSORS
The TLP507A photo-interrupter features a high
current transfer ratio (10 /IF).
0 Gap .' 3 mm
0 Resolution : Slit width = 0.5mm
0 High current transfer ratio: IC/ IF = 30% (min)
0 Dark current : ID = 0.25 PA (max)
0 Package material : Polycarbonate
TOSHIBA 11-13D1
Weight .' 0.83 g (typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 50 mA
© Forward Current Derating
m o - . o
A (Ta > 25°C) AIF/ C 0 33 mA/ C
Reverse Voltage VR 5 V
m Collector-Emi; Voltage VCEO 30 V
g Emitter-Collector Voltage VECO 5 V
O Collector Power Dissipation PC 75 mW
E Collector Power Dissipation
g Derating (Ta > 25°C) APC/ C -1 mW/ C
Collector Current 10 50 mA
Operating Temperature Range Topr -25--85 "C
Storage Temperature Range Tstg -30--100 "C
1 2002-04-04
TOSHIBA TLP507A
MARKINGS
Product number
Monthly lot number
r’". T, T,
E§EE3 HH Month of manufacture
t Q. t |--'
(January to December denoted by letters A to L respectively)
Year of manufacture
(last digit of year of manufactur) Letter color .. Silver
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Cl Forward Voltage VF IF = 10mA 1.00 1.15 1.30 V
a Reverse Current IR VR = 5 V - - 10 PA
Peak Emission Wavelength AP IF = 10mA - 940 - nm
(8) Dark Current ID (1CEO) VCE = 16V, IF = o - - 0.25 PA
E Peak Sensitivity Wavelength AP - - 800 - nm
a Current Transfer Ratio IC/IF VCE = 2 V, IF = 10 mA 30 - 44o %
t Rise Time tr VCC=5V IC=10mA - 200 -
- , ' /2S
8 Fall Time tf RL - 100 ft - 200 -
2 2002-04-04
TOSHIBA
PRECAUTIONS
The following points must be borne in mind.
Soldering temperature .' 260°C max
Soldering time : 5 s max
(Soldering must be performed 1.5 mm under the package body.)
Clean only the soldered part of the leads. Do not immerse the entire package in the cleaning
solvent.
Mount the device on a level surface.
Screws should be tightened to a clamping torque of 0.59 Nan.
The package is made of polycarbonate. Polycarbonate is usually stable with acid, alcohol and
aliphatic hydrocarbons, however, with petrochemicals (such as benzene, toluene and acetone),
alkalis, aromatic hydrocarbons, or chloric hydrocarbons, polycarbonate may crack, swell or melt.
Please take this into account when chosing a packaging material by refering to the table below.
PHENOMENON CHEMICALS
A Staining and slight
deterioration
Nitric acid (diluted), hydrogen peroxide, chlorine
Acetic acid (70% or more)
Gasoline
Methyl ethyl ketone, ethyl acetate, butyl acetate
Ethyl methacrylate, ethyl ether, MEK
Acetone, m-amino alcohol, carbon tetrachloride
Carbon disulfide, trichloroethylene, cresol
Thinners, oil of turpentine
Triethanolamine, TCP, TBP
Concentrated sulfuric acid
Benzene
Styrene, acrylonitrile, vinyl acetate
Ethylenediamine, diethylenediamine
.{Chloroform, methyl chloride, tetrachloromethane, dioxanel
1, 2-dichloroethane j
o Ammonia water
. Other alkalis
Cracking, crazed or
swelling
Melting
I ) : Used as solvent
D Decomposition
Conversion efficiency falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in conversion efficiency over time.
The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is
IC/IF(t) - Po(t)
IC/IF(0) - PO(0)
3 2002-04-04
TLP507A
TOSHIBA
PACKAGE DIMENSIONS
TLP507A
Unit : mm
Slitwidth
A 110.2
11-13D1
LED mark
Center of sensor
I I I I I at;
I . I I I 'o. u:
l l I I NI I II
, 4-NMU0.15
(7.62)
Weight : 0.83g (typ.)
PIN CONNECTION
. Cathode
. Anode
. Emitter
. Collector
Tolerance unless otherwise specified : 10.25
( ) : Reference value
TOSHIBA
ALLOWABLE FORWARD
CURRENT 1p (mA)
FORWARD CURRENT IF (mA)
RELATIVE COLLECTOR CURRENT
20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IF - " (typ.)
0.8 0.9 1.0 1.1 1.2 1.3 1.4
FORWARD VOLTAGE VF (V)
RELATIVE IC - IF (typ.)
VCE=2V
0.3 SAMPLEA
Ta = 25''C
SAMPLEB
1 3 5 10 30 50 100
FORWARD CURRENT IF (mA)
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
COLLECTOR CURRENT 10 (mA)
RELATIVE CURRENT TRANSFER RATIO
TLP507A
20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
-v (.)
1 2 3 4 5 6
COLLECTOR-EMITTER VOLTAGE VCE (V)
RELATIVE IC/IF - Ta (typ.)
AMBIENT TEMPERATURE Ta CC)
20 40 60 80 100
TOSHIBA
SWITCHING CHARACTERISTICS
INPUT PULSE
Ta = 25''C
OUTPUT PULSE
100 300 500 1k 3k 5k 10k
LOAD RESISTANCE RL (Q)
ID - Ta (typ.)
20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE Ta (°C)
SWITCHING TIME (ms)
RELATIVE COLLECTOR CURRENT Ic (%)
TLP507A
SWITCHING CHARACTERISTICS
(SATURATED OPERATION)
3 / VI INPUT PULSE
Ta = 25°C
OUTPUT PULSE
1k 3k 5k 10k
30k 50k 100k
LOAD RESISTANCE RL (0)
DETECTION POSITION
CHARACTERISTICS (typ.)
Ta = 25°C
SHUTTER 7
DETECTION I
POSITION
d = 0 i 0.6 mm
_ 3 _ 2 - 1 0 1 2 3
DISTANCE d (mm)
TOSHIBA TLP507A
RELATIVE POSITIONING OF SHUTTER AND DEVICE
For normal operation position the shutter and the device as shown in the figure below. By considering
the device's detection direction characteristic and switching time, determine the shutter slit width and
pitch.
Shutter _ F- A
l l Unit in mm
F___'I
- - Center of sensor
5.5max
Cross section between A and A'
7 2002-04-04
TOSHIBA TLP507A
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
8 2002-04-04
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