TLP331 ,Photocoupler GaAs Ired & Photo .Transistor
TLP331 ,Photocoupler GaAs Ired & Photo .Transistor
TLP332 ,Photocoupler GaAs Ired & Photo .Transistor
TLP332 ,Photocoupler GaAs Ired & Photo .Transistor
TLP3502 ,Photocoupler GaAs Ired & Photo -Triac
TLP3502 ,Photocoupler GaAs Ired & Photo -Triac
TMS2516-25JL , 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
TMS2516-35JL , 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
TMS2516-45 , 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
TMS2516-45JL , 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
TMS2532 , 32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES
TMS2532-30JL , 32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES
TLP331-TLP332
Photocoupler GaAs Ired & Photo .Transistor
TLP331,TLP332 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP331,TLP332 Office Machine
Household Use Equipment
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide
infrared emitting diode optically coupled to a photo−transistor in a six
lead plastic DIP package.
This photocoupler provides the unique feature of high current transfer
ratio at both low output voltage and low input current. This makes it
ideal for use in low power logic circuits, telecommunications equipment
and portable electronics isolation applications.
TLP332 is no−base internal connection for high−EMI environments. Collector−emitter voltage: 55V (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577, file no. E67349 Current transfer ratio
(*) Ex. Standard: TLP331
Rank BV: TLP331(BV)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP331(BV): TLP331
Pin Configurations(top view) 1: ANODE
2: CATHODE
3: NC
4: EMITTER
5: COLLECTOR
6: BASE 3
1: ANODE
2: CATHODE
3: NC
4: EMITTER
5: COLLECTOR
6: NC 3
TLP331 TLP332
Unit in mm
Weight: 0.4 g
