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TLP251
Photocoupler GaAlAs Ired & Photo IC
TLP251 TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC
TLP251 Inverter For Air Conditionor
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A) Input threshold current: IF=5mA(max.) Supply current (ICC): 11mA(max.) Supply voltage (VCC): 10−35V Output current (IO): ±0.4A(max.) Switching time (tpLH / tpHL): 1µs(max.) Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, file no.E67349
Schematic VF
IF
ICC
GND
VCC
A 0.1µF bypass capcitor must be connected
between pin 8 and 5(see Note 5).
Pin Configuration (top view) 1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : Gnd
6 : VO (Output)
7 : N.C.
8 : VCC
Truth Table Weight: 0.54g
Unit in mm
