TLP250 ,Photocoupler GaAlAs Ired & Photo .ICTLP250 TOSHIBA Photocoupler GaAlAs Ired & Photo−IC TLP250 Transistor Inverter Inverter For Air ..
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TLP250
Photocoupler GaAlAs Ired & Photo .IC
TLP250 TOSHIBA Photocoupler GaAlAs Ired & Photo−IC
TLP250 Transistor Inverter
Inverter For Air Conditionor
IＧＢＴ Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. Input threshold current: IF=5mA(max.) Supply current (ICC): 11mA(max.) Supply voltage (VCC): 10−35V Output current (IO): ±1.5A (max.) Switching time (tpLH/tpHL): 1.5µs(max.) Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, file No.E67349 Option (D4) type VDE approved: DIN VDE0884/06.92,certificate No.76823 Maximum operating insulation voltage: 630VPK Highest permissible over voltage: 4000VPK
(Note) When a VDE0884 approved type is needed,
please designate the "option (D4)" Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Schmatic Pin Configuration (top view) 1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : VO (Output)
7 : VO
8 : VCC
2+
VF
IF
3-
ICC
VO
GND
VO
VCC
connected between pin 8 and 5 (See Note 5).
Truth Table Unit in mm
Weight: 0.54 g
