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TMPN3120FE3M , TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TLP225A
PHOTOCOUPLER PHOTO-RELAY
TOSHIBA
TOSHIBA PHOTOCOUPLER PHOTO RELAY
TLP225A
PROGRAMMABLE CONTROLLERS
I/O BOARD INTERFACE
DC-OUTPUT MODULE
REPLACEMENT FOR DC MECHANICAL RELAY
The TOSHIBA TLP225A consist of a gallium arsenide infrared
emitting diode optically coupled to a photo-MOS FET in a four lead
plastic DIP package (DIP4).
(The TLP225A is MOSFET output and can control a current of
0.5A which is suitable for DC output module.
0 Peak Off-State Voltage
0 Trigger LED Current
0 On-State Current
0 On-State Resistance
0 Isolation Voltage
0 UL Recognized
: 60V (Min.)
.' 5 mA (Max.)
: 500mA (Max.)
.' 1.1 n (Max.)
.' 2500 Vrms(Min.)
: UL1577, File No. E67349
TLP225A
Unit in mm
6.4 i 0.25
4.58 * 0.25
3.651%?
1210.15]
0.5 ttht
0.8 1 0.25
TOSHIBA
11-5B2
Weight .' 0.27g
PIN CONFIGURATION (TOP VIEW)
1 E Cl 4
2|: Cl 3
1 : ANODE
2 : CATHODE
3 : SOURCE
4 : DRAIN
2001 -06-01
TOSHIBA TLP225A
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 50 mA
Forward Current Derating (Ta 3 53°C) AIF/ "C -0.5 mA/ T
© Peak Forward Current
m I 1 A
.4 (100 gs pulse, 100 pps) FP
Reverse Voltage VR 5 V
Junction Temperature Tj 125 "C
g Off-State Output Terminal Voltage VOFF 60 V
t On-State Current ION 500 mA
E On-State Current Derating (Ta 2 25''C) AION/ "C -5.0 mA/ T
Cl Junction Temperature Tj 125 °C
Storage Temperature Range Tstg -55--125 °C
Operating Temperature Range Topr -20--85 "C
Lead Soldering Temperature (10 s) Tsol 260 °C
Isolation Voltage(AC, Imin., R.H. 1 60%) BVS 2500 Vrms
(Note 1)
(Note 1) : Pins 1 and 2 shorted together and pins 3 and 4 shorted together.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage VDS - - 48 V
Forward Current IF 12 20 30 mA
Collector Current ION - - 300 mA
Operating Temperature Topr -20 - 60 "C
2 2001-06-01
TOSHIBA TLP225A
INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V
a Reverse Current IR VR = 5 V - - 10 PA
'4 Capacitance CT V = o, f = 1 MHz - 30 - pF
t'j',) Off-State Current IOFF VOFF = 60 V - - 1 PA
E Capacitance COFF V = o, f = 1 MHz - - - pF
COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Trigger LED Current IFT ION = 500 mA - 3 5 mA
On-State Resistance RON ION = 500 mA, IF-- 10 mA - 0.8 1.1 fl
ISOLATION CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Capacitance Input to Output CS VS = 0, f = 1 MHz - 0.8 - pF
Isolation Resistance RS VS = 500V, R.H. s 60% 5 M 1010 1014 - n
AC, 1 minute 2500 - - V
Isolation Voltage BVS AC, 1 second, in oil - 5000 - ms
DC, 1 minute, in oil - 5000 - Vdc
SWITCHING CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Turn-on Time tON RL = 200 n (Note 2) - - 2 ms
Turn-off Time tOFF VDS = 20 V, IF = 10 mA - - 2
(Note 2) : SWITCHING TIME TEST CIRCUIT
TLP227G V
Ig: 1 RL I DS IF
o-o- -o-
2 -oVOUT
VOUT 10%
tON I . tOFF
3 2001-06-01
TOSHIBA TLP225A
IF - Ta ION - Ta
100 600
ION (mA)
IF (mA)
20 100
ALLOWABLE F0 RWARD CURRENT
ALLOWABLE MOS FET CURRENT
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C)
IFP - DR IF - VF
5000 100
3000 PULSE WIDTH s 100 ,us 50 Ta = 25''C
35 Ta = 25°C g 30
E2 1000 a.
h v 10
a I 500 e
BJ.', 300 m 5
not: 100 ©
<1: M 1
S 50 t 0.5
d: 30 fi 0.3
10 0.1
3 10-3 3 10-2 3 10-1 3 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8
DUTY CYCLE RATIO DR FORWARD VOLTAGE VF (V)
AVF /ATa - IF IFP - VFP
2 1000
A -2.8 E
ES: v 500
> o. 300
g g -2.4 &
5; a 100
23 -2.0 g;
a.) Ex. ttt 50
Rm Q 30
S -1.6 ©
B, 3 10
22 - 1.2 ot
5E: 2 5 PULSE WIDTH s 10 Ms
53 -0.8 a 3 REPETITIVE
go g FREQUENCY = 100 Hz
-0 l " 1 Ta = 25°C
0.1 0.3 0.5 1 3 5 10 30 50 0.6 1.0 1.4 1.8 2.2 2.6 3.0
FORWARD CURRENT IF (mA) PULSE FORWARD VOLTAGE VFp (V)
4 2001-06-01
TOSHIBA
MOS FET ON-STATE CURRENT ION (mA)
ION - VON
Ta = 25''C
IF = 10 mA
0 0.1 0.2 0.3 0.4 0.5 0.6
MOS FET ON-STAGE VOLTAGE VON (V)
MOS FET OFF-STATE CURRENT IOFF (nA)
IOFF - Ta
0 20 40 60 80
AMBIENT TEMPERATURE Ta (°C)
TLP225A
2001 -06-01
TOSHIBA TLP225A
RESTRICTIONS ON PRODUCT USE
000707EBC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
O The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
6 2001-06-01
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