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TLP176G
Photocoupler GaAs Ired & Photo .MOS FET
TLP176G TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET
TLP176G Modems In PC
Modem−Fax Cards
Telecommunictions
The TOSHIBA TLP176G consists of gallium arsenide infared emitting
diode optically coupled to a photo−MOS FET in a SOP,
which is suitable for surface mount assembly.
The TLP176G is suitable for the modem applications which require space
savings. Peak off−state voltage: 350V (min) Trigger LED current: 3mA (max) On−state resistance: 35Ω (max) Isolation voltage: 1500Vrms (min) UL recognized: UL1577, file No. E67349 BSI approved
: BS EN60065: 1994,certificate No.8273
BS EN60950: 1992,certificate No.8274 SEMKO approved: SS EN60065
SS EN60950 Option(V4)type
TUV approved: DIN VDE0884 / 06.92,
Certificate No.R9850580
Pin Configuration (top view) Schematic 1-Form-A
1. : Anode
2. : Cathode
3. : Drain
4. : Drain 4 3 1 3
Unit in mm
Weight: 0.1 g
