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TLP176A
PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET
TOSHIBA TLP176A
TENTATIVE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET
TLP1l76A
MEASUREMENT INSTRUMENT Unit in mm
DATA ACQUISITION
TELECOMMUNICATION
PROGRAMMABLE CONTROL Cl n H
The TOSHIBA TLP176A consists of gallium arsenide infrared C) '
emitting diode optically coupled to a photo-MOS FET in a SOP, U U .
which is suitable for surface mount assembly. 3.9:02 g
The TLP176A is suitable for replacement of mechanical relays in _ei, 3 a
many applications which require space savings. 'liFii)T 0L
I 3 - Q6204
0.41:0.1 g
J 254x025 7.0:0.4 I
0 SOP 4pin (2.54SOP4) : l-Form-A
0 Peak Off-State Voltage .' 60V (MIN.)
0 Trigger LED Current '. 3 mA (MAX.)
0 On-State Current : 400mA (MAX.) JEDEC -
0 S R . 2 n MAX JEITA -
o - : .
n tate esistance ( ) T OSHIB A
0 Isolation Voltage : 1500 Vrms (MIN) Weight .' 0.1 g
0 UL Recognized : UL1577, File No. E67349
PIN CONFIGURATION (TOP VIEW) SCHEMATIC
1 I: Cl 4 1-Form-A 1 4
t f 4 3 lr
l: C,.,,-,.) c. E r-
2 C £33 'I I I
1 2 F- C
1 .' ANODE 2 I- 3
2 : CATHODE
3 : DRAIN
4 .' DRAIN
1 2003-03-12
TOSHIBA TLP176A
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 50 mA
Cl Forward Current Derating (Ta 2 25°C) AIF/ "C -0.5 mA/ "C
g Pulse Forward Current (100 ,us pulse, 100 pps) IFP 1 A
Reverse Voltage VR 5 V
Junction Temperature Tj 125 T
g Off-State Output Terminal Voltage VOFF 60 V
t On-State Current . ION 400 mA
'r) ?rgsgtazténg Current Derating AION /°C -4.0 mA /°C
Cl Junction Temperature Tj 125 °C
Storage Temperature Range Tstg -55--125 T
Operating Temperature Range Topr -40--85 T
Lead Soldering Temperature (10 s) Tsol 260 T
Isolation Voltage (AC, 1 min., R.H. s 60%) (Note 1) BVS 1500 Vrms
(Note 1) Device considered a two-terminal device .' pins 1 and 2 shorted together
and pins3 and 4 shorted together.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage VDD - - 48 V
Forward Current IF 5 7.5 25 mA
On-State Current ION - - 400 mA
Operating Temperature Topr -20 - 65 ''C
2 2003-03-12
TOSHIBA TLP176A
INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
© Forward Voltage VF IF = 10mA 1.0 1.15 1.3 V
a Reverse Current IR VR = 5 V - - 10 pA
Capacitance CT V = o, f = 1 MHz - 30 - pF
(E) Off-State Current IOFF VOFF = 60V - - 1 PA
E Capacitance COFF V = 0, f = 1 MHz - 140 - pF
COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Trigger LED Current IFT ION = 400mA - 1 3 mA
On-State Resistance RON ION = 400 mA, IF = 5 mA - 1 2 fl
ISOLATION CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Capacitance Input to Output CS VS = 0, f = 1 MHz - 0.8 - pF
Isolation Resistance RS VS = 500V, R.H. s 60% 5X1010 1014 - ft
AC, 1 minute 1500 - - V
Isolation Voltage BVS AC, 1 second (in oil) - 3000 - rms
DC, 1 minute (in oil) - 3000 - Vdc
SWITCHING CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Turn-on Time tON RL = 200 n (Note 2) - 0.9 2.0
Turn-off Time tOFF VDD = 20 V, IF = 5 mA - 0.1 1.0
(Note 2) Switching Time Test Circuit
Ig: 1 4 RL I VDD IF
o-o- -o-
2 3 OUT
tON l I tOFF
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TOSHIBA
TLP176A
ALLOWABLE FORWARD CURRENT
IF (mA)
-20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (°C)
IFP - DR
3000 PULSE WIDTH s 100 Ms
Ta = 25''C
ALLOWABLE PULSE FORWARD CURRENT
3 10-3 3 10-2 3 IO-I 3 100
DUTY CYCLE RATIO DR
AVF/ATa - IF
.N’ 5°
4:. co
FORWARD VOLTAGE TEMPERATURE
COEFFICIENT AVF/ATa (mV/°C)
0.3 0.5 1 3 5 10
FORWARD CURRENT IF (mA)
ALLOWABLE MOSFET ON-STATE CURRENT
ION(RMS) (mA)
FORWARD CURRENT IF (mA)
PULSE FORWARD CURRENT Ipp (mA)
10N(RMS) - Ta
- 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (''C)
IF - VF
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE VF (V)
IFP - VFP
3 PULSE WIDTH s 10 As
REPETITIVE FREQUENCY = 100 Hz
Ta = 25°C
0.6 1.0 1.4 1.8 2.2 2.6 3.0
PULSE FORWARD VOLTAGE VFP (V)
TOSHIBA
TLP176A
RELATIVE TRIGGER LED CURRENT
IFT/IFT (Ta
MOSFET ON-STATE RESISTANCE RON
IFT - Ta
- 40 - 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
RON - Ta
ION=400mA
IF=5mA
_......-----'"
-20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
MOSFET ON-STATE CURRENT IoN (mA)
MOSFET OFF-STATE CURRENT ION (mA)
ION - VON
-0.4 -0.2 o 0.2 0.4 0.6
MOSFET ON-STATE VOLTAGE VON (V)
IOFF - Ta
0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
TOSHIBA TLP176A
RESTRICTIONS ON PRODUCT USE
020704EBC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 GaAs (Gallium Arsenide) is a substance used in the products described in this document. GaAs dust or
vapor is harmful to the human body. Do not break, cut, crushu or dissolve chemically.
O The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
6 2003-03-12
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