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TLP140M
TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE
TLPxxM/G/G-1
PowerSO-10TM
TLPxxMTRIPOLAR OVERVOLTAGE
PROTECTION for TELECOM LINE
Application Specific Discretes
A.S.D.
September1998-Ed:3C
2
PAK TLPxxG2
PAK TLPxxG-1
MAIN APPLICATIONSAny sensitive telecom equipmentrequiring protec-
tion against lightning:
Analogand ISDNline cards
Main Distribution Frames
Terminal and transmission equipment
Gas-tubereplacement
DESCRIPTIONThe TLPxxM/G/G-1 series are tripolar transient
surge arrestors usedfor primary and secondary
protectionin sensitivetelecomequipment.
FEATURESTRIPOLAR CROWBAR PROTECTION
VOLTAGE RANGE SELECTED FOR
TELECOMAPPLICATIONS
REPETITIVEPEAK PULSE CURRENT:
IPP= 100A(10/ 1000μs)
HOLDING CURRENT:IH= 150mA
LOW CAPACITANCE:C= 110pF typ.
LOW LEAKAGE CURRENT:IR=5μA max
BENEFITS ageing andno noise. destroyed,the TLPxxM/G/G-1 falls into short
circuit,still ensuringprotection.
Accessto Surface Mount applicationsthanksto
the PowerSO-10TM andD2 PAK package.
TM:ASD andPowerSO-10are trademarksofST Microelectronics.
RINGTIP
GND
RINGTIP
RINGTIP
RINGTIP
RINGTIP
TAB
GND
GND
RINGTIP
TAB
GND
GNDRINGTIP1/14
COMPLIESWITH THE
FOLLOWING STANDARDS:
Peak Surge
Voltage
(V)
Voltage
Waveform
(μs)
Current
Waveform
(μs)
Admissible
Ipp
(A)
Necessary
Resistor
(Ω)CCITT K20 4000 10/700 5/310 100 -
VDE0433 4000 10/700 5/310 100 -
VDE0878 4000 1.2/50 1/20 100 -
IEC-1000-4-5 level4
level4
10/700
1.2/50
5/310
8/20
FCC Part68, lightning surge
typeA
10/160
10/560
10/160
10/560
FCC Part68, lightning surge
typeB
1000 5/320 5/320 25 -
BELLCORETR-NWT-001089
FIRST LEVEL
2/10
10/1000
2/10
10/1000
BELLCORETR-NWT-001089
SECOND LEVEL
5000 2/10 2/10 500 -
CNET I31-24 4000 0.5/700 0.8/310 100 -
Analog
Main Distribution FrameLine
Card
TLPxxM/G/G-1
TYPICAL APPLICATION
Primaryprotection module
TLPxxM/G/G-1RING
RELAY
LINEA
LINEB
LCP1511D-Vbat
SLIC
220nF
PTC
PTC
Analog line card protection
TLPxxM/G/G-12/14
Symbol Parameter Value UnitIPP Peakpulse current(longitudinal& transversal mode):
10/1000μs (opencircuit voltage waveform1kV 10/1000μs)
8/20μs (open circuit voltage waveform4kV 1.2/50μs)
2/10μs (opencircuit voltage waveform 2.5kV 2/10μs)
ITSM Mains powerinduction
VRMS= 300V,R= 600Ω= 200ms 0.7 A
Mains powercontact
VRMS= 220V,R= 10Ω (Fail-Safethreshold) t= 200ms 31 A
VRMS= 220V,R= 600Ω t=15mn 0.42 A
Tstg Storagetemperature range -55to+ 150 °C Maximum operating junction temperature 150 °C Maximum lead temperaturefor soldering during10s 260 °C
TOP Operatingtemperaturerange -40to+85 °C
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)
Symbol DescriptionIPP Peak pulse current
ITSM Maximum peak on-state current Leakage current
IRM Leakage current Holding current
VBR Breakdown voltage Continuousreverse voltage
VRM Maximum stand-off voltage
VBO Breakovervoltage Capacitance
PARAMETERMEASUREMENT INFORMATIONVRMVRVBOIRM
IPP
TLPxxM/G/G-1Feeder
1/2 DA108S1Internal
circuitry
Power
TYPICAL APPLICATION
ISDN:U interface protection
TLPxxM/G/G-13/14
Type
IRM @VRM IR @VR C
max. max. typ.note
μAV μAV pF
TLP140M/G/G-1 5 120 50 140 35
TLP200M/G/G-1 5 180 50 200 35
TLP270M/G/G-1 5 230 50 270 35
Note:VR=50Vbias, VRMS=1V,F=1 MHz.
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING(Tamb =25°C)
Type
IRM @VRM IR @VR VBO @
IBO IH C@VR
max. max. max. max. min. typ.note1 note2 note3 note4 note5
μAV μAV V mA mA pF pF
TLP140M/G/G-1 5 120 50 140 200 500 150 110 40
TLP200M/G/G-1 5 180 50 200 290 500 150 110 40
TLP270M/G/G-1 5 230 50 270 400 500 150 110 40
Note1:IR measuredatVR guaranteesVBRmin >VR.
Note2: Measuredat50Hz.
Note3:See functionalholding current testcircuit.
Note4:VR= 0Vbias,VRMS=1V,F=1 MHz.
Note5:VR= 50Vbias, VRMS=1V,F=1MHz (TIPor RING(-) /GND(+)).
ELECTRICALCHARACTERISTICS BETWEENTIP AND GND, RING AND GND(Tamb =25°C)
Symbol Parameter Value UnitRth (j-c) Junctionto case TLPxxM
TLPxxG
TLPxxG-1
°C/W
Rth (j-a) Junctionto ambient TLPxxM
TLPxxG
TLPxxG-1
seetable page14
seetable page14
seetable page14
°C/W
THERMAL RESISTANCE
TLPxxM/G/G-14/14
FUNCTIONAL HOLDING CURRENT(IH) TEST CIRCUIT: GO-NOGO TESTPBAT -48V=
Surge generator
D.U.T.
Thisisa GO-NOGOtest which allowsto confirmthe holdingcurrent(IH) levelina functionaltest circuit.
TEST PROCEDURE: Adjustthe currentlevelattheIH valueby short circuitingthe D.U.T. Firethe D.U.T. witha surgecurrent:IPP= 10A, 10/1000μs. The D.U.T.will come backtothe off-statewithina durationof 50ms max.
ORDER CODE
Package Types MarkingPowerSO-10 TLP140M
TLP200M
TLP270M
TLP140M
TLP200M
TLP270M2 PAK TLP140G
TLP200G
TLP270G
TLP140G
TLP200G
TLP270G2 PAK TLP140G-1
TLP200G-1
TLP270G-1
TLP140G
TLP200G
TLP270G
MARKING
TPL 270 M- TRBreakdownVoltage
Packaging:
-TR=tapeandreelonlyfor”M”versi on(600pcs) tube(50 pcs)TripolarLine Protection
Package:: Power SO10
G:D2 PAK
G-1:I2 PAK
TLPxxM/G/G-15/14
0.01 0.1 1 10 100 10000
t(s)
ITSM(A)
F=50Hz initial=25°C
TIPorRINGGND
Fig.1: Maximum peak on-statecurrent versus
pulseduration.
-40 -20 0 20 406080
Tamb(°C)
IH(Tamb)/IH (25°C)
Fig.2: RelativevariationofIH versusTamb.
TIP
GND
RING
10/1000μs
100A
surgegenerator
VBO
TIPRING
VBO
TIP-GND
Fig.4: Test diagramfor breakover voltage
measurement. 10 100 20010
200
C(pF)F=1MHz
Vosc=1VRMS
Tj=25°C
LINE-/GND+
LINE/LINE
LINE+/GND-
VR(V)
Fig.3-1 :junction capacitance versus appliedre-
verse voltage (typical values) (TLP140M/G/G-1). 10 100 20010
200
C(pF)F=1MHz
Vosc=1VRMS
Tj=25°C
LINE- /GND+
LINE/LINE
LINE+/GND-
VR(V)
Fig.3-2 :junction capacitanceversus appliedre-
verse voltage (typical values)(TLP200M/G/G-1). 10 100 30010
C(pF)
F=1MHz
Vosc=1VRMS
Tj=25°C
LINE- /GND+
LINE/LINE
LINE+/GND-
VR(V)
Fig.3-3 :junction capacitance versus appliedre-
verse voltage (typical values) (TLP270M/G/G-1).
TLPxxM/G/G-16/14
0.01 0.1 1 10 100 1,000 10,000 100,0001
dV/dt
Vbr/Vbr
TIPRING
TIP+ GND-
TIP-GND+
Fig.5-1: Breakovervoltagemeasurement
(TLP140M/G/G-1).
0.01 0.1 1 10 100 1,000 10,000 100,0001
dV/dt
Vbo/Vbr
TIPRING
TIP+GND-
TIP-GND+
Fig.5-2: Breakovervoltage measurement
(TLP200M/G/G-1).
0.01 0.1 1 10 100 1,000 10,000 100,0001
dV/dt
Vbo/Vbr
TIP+ GND-
TIP RING
TIP- GND+
Fig.5-3: Breakover voltage measurement
(TLP270M/G/G-1).
TLPxxM/G/G-17/14