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TLP140G-TLP270G
TRIPOLAR OVERVOLTAGE PROTECTION FOT TELECOM LINE
TLPxxM/G/G-1TRIPOLAR OVERVOLTAGE
PROTECTION for TELECOM LINE
Application Specific Discretes
A.S.D.
September 1998 - Ed : 3C
MAIN APPLICATIONSAny sensitive telecom equipment requiring protec-
tion against lightning :
Analog and ISDN line cards
Main Distribution Frames
Terminal and transmission equipment
Gas-tube replacement
DESCRIPTIONThe TLPxxM/G/G-1 series are tripolar transient
surge arrestors used for primary and secondary
protection in sensitive telecom equipment.
FEATURESTRIPOLAR CROWBAR PROTECTION
VOLTAGE RANGE SELECTED FOR
TELECOM APPLICATIONS
REPETITIVE PEAK PULSE CURRENT :
IPP = 100 A (10 / 1000 μs)
HOLDING CURRENT : IH = 150 mA
LOW CAPACITANCE : C = 110 pF typ.
LOW LEAKAGE CURRENT : IR = 5 μA max
BENEFITSNo ageing and no noise.
If destroyed, the TLPxxM/G/G-1 falls into short
circuit, still ensuring protection.
Access to Surface Mount applications thanks to
the PowerSO-10TM and D2 PAK package.
TM: ASD and PowerSO-10 are trademarks of ST Microelectronics.
1/14
TYPICAL APPLICATION
Primary protection module
Analog line card protection
TLPxxM/G/G-12/14
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
PARAMETER MEASUREMENT INFORMATION
TYPICAL APPLICATION
ISDN: U interface protection
TLPxxM/G/G-13/14
Note : VR = 50 V bias, VRMS = 1V, F = 1 MHz.
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING (Tamb = 25°C)
Note 1: IR measured at VR guarantees VBR min > VR.
Note 2: Measured at 50 Hz.
Note 3: See functional holding current test circuit.
Note 4: VR = 0V bias, VRMS = 1V, F = 1 MHz.
Note 5: VR = 50V bias, VRMS = 1V, F = 1 MHz (TIP or RING (-) / GND (+)).
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND GND, RING AND GND (Tamb = 25°C)
THERMAL RESISTANCE
TLPxxM/G/G-14/14
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT: GO-NO GO TEST
ORDER CODE
MARKING
TLPxxM/G/G-15/14
0.01 0.1 1 10 100 1000
ITSM(A)
Fig. 1: Maximum peak on-state current versus
pulse duration.
IH(Tamb)/IH (25°C)
Fig. 2: Relative variation of IH versus Tamb.
TIP
GND
RING
VBO
TIP-GND
Fig. 4: Test diagram for breakover voltagemeasurement. 10 100 20010
200
C(pF)
Fig. 3-1 :junction capacitance versus applied re-verse voltage (typical values) (TLP140M/G/G-1). 10 100 20010
Fig. 3-2 :junction capacitance versus applied re-
verse voltage (typical values) (TLP200M/G/G-1). 10 100 30010
200
C(pF)
Fig. 3-3 :junction capacitance versus applied re-verse voltage (typical values) (TLP270M/G/G-1).
TLPxxM/G/G-16/14
0.01 0.1 1 10 100 1,000 10,000 100,0001
dV/dt
Vbr/Vbr
Fig. 5-1 : Breakover voltage measurement
(TLP140M/G/G-1).
0.01 0.1 1 10 100 1,000 10,000 100,0001
dV/dt
Vbo/Vbr
Fig. 5-2 : Breakover voltage measurement
(TLP200M/G/G-1).
0.01 0.1 1 10 100 1,000 10,000 100,0001
dV/dt
Vbo/Vbr
Fig. 5-3 : Breakover voltage measurement
(TLP270M/G/G-1).
TLPxxM/G/G-17/14
