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TLN117
INFRARED LED GaAs INFRARED EMITTER
TOSHIBA TLN117
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
TLN1l1l7
OPTO-ELECTRONIC SWITCHES Unit :mm
FLOPPY DISK DRIVES 2.51m
‘Qh -0'i')
OPTICAL MISE + ___ _
OPTICAL TOUCH SENSORS (SEW (h")
W'') 'tu, (b") 3 o-h,
g 5’05 12:3] 1mm
. . . g): l 3:-isvs'''''1 g; 041201 C"
0 Small-side-view epoxy-resm package - I ! ttc---,)----)
0 High radiant intensity: IE = 0.8 mW/ sr (min) at IF = 20mA 'sc-is, - - tiss,:')::))-)---')''--" A
o Half-angle value .' " = i15° (typ.) V s,''; -, I :4;
0 Ideal for use in combination with the following photodetectors (1.18) - r,,'',-;:.-,,',; I
which have identical external dimensions I
Phototransistor TPS621, TPS622 l
Photodarlington transistors TPS625, TPS626 1 , _ 2"ao-4si'l
- (2.54)
MAXIMUM RATINGS (Ta = 25°C) ( ):Reference value
CHARACTERISTIC SYMBOL RATING UNIT TOSHIBA 4-3Pl
Forward Current IF 50 mA Weight : 0.1 g (typ.)
Pulse Forward Current IFP 600 (Note 1) mA
Forward Current Derating o o
(Ta > 25°C) AIF/ C -0.33 mA/ C
Reverse Voltage VR 5 V PIN CONNECTION
Operating Temperature Topr -25--85 "C 1 C ath 0 de
- ...- o 1 o-M-o 2 .
Storage Temperature Tstg 40 100 C 2. Anode
Soldering Temperature (5 s) Tsol 260 (Note 2) "C
(Note 1) .' Pulse width s 100 ps, repetitive frequency = 100 Hz
(Note 2) : Soldering must be performed 2mm from the bottom of the package body.
1 2001-11-22
TOSHIBA TLN117
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse Current IR VR = 5 V - - 10 PA
TLN117 0.8 - -
. . - TLN117 (A) 0.8 - 3
Radiant Intensity IE IF - 20 mA TLN117 (B) 2 - 7.5 mW/ sr
TLN117 (C) 5 - 18.7
Radiant Power Po IF = 20 mA - 2.5 - mW
Capacitance CT VR = 0, f = 1 MHz - 30 - pF
Peak Emission Wavelength lp IF = 20 mA - 940 - nm
Spectral Line Half Width AA IF = 20 mA - 50 - nm
Half Value Angle rl IF = 20 mA - i 15 - D
PRECAUTIONS
Please be careful of the followings.
I. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
2. Radiation intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 :1.
IE (t) - P0(t)
IE(0) - PO(0)
2 2001-11-22
TOSHIBA TLN117
IF - Ta E IFP - PW
80 E 3000
M Ct 1000
D 60 ir,-, 500
© fig 300
2A _ -
av 40 _ 5~ 100
t? w, "s. m
._. "ss
M g 50 -
'd a: 30 lOkHz_5kHz 2kHz_1kHz
3 20 B
" j 10
i < 3pr 10pt 30p 100pr 300p 1m 3m 10m
0 PULSE WIDTH PW (s)
20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IF - VF (typ.) IE - IF (typ.)
,1 Iii
2 Ta 750 F
g PULSE WIDTH s 100 ,us
REPETITIVE
FREQUENCY = 100 Hz
0.9 1.0 1.1 1.2 1.3 1.4 1.5 Ta = 25°C
FORWARD VOLTAGE " (V) -1 3 10 30 100 300
PULSE FORWARD CURRENT IFP (mA)
3 2001-11-22
TOSHIBA TLN117
PULSE FORWARD CURRENT I“: (mA)
RELATIVE INTENSITY
IFP - VFP (typ.) RELATIVE IE - Ta (typ.)
30 0.3
RELATIVE RADIANT INTENSITY
10 0.1
'C40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta CC)
3 PULSE WIDTH s 100 Ms
REPETITIVE
FREQUENCY = 100 HZ
Ta = 25°C
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
PULSE FORWARD VOLTAGE VFP (V)
WAVELENGTH CHARACTERIISTIC
(typ.) RADIATION PATTERN (typ.)
IF = 20 mA (Ta = 25°C)
Ta = 25°C
0 ti' 9
820 860 900 940 980 1020 0 0.2 0.4 0.6 0.8 1.0
RELATIVE INTENSITY
WAVELENGTH l (nm)
4 2001-11-22
TOSHIBA TLN117
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
5 2001-11-22
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