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TLN110
INFRARED LED GaAs INFRARED EMITTER
TOSHIBA TLN110
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
TLN110
INFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mm
REMOTE-CONTROL SYSTEMS '34: E
SMOKE SENSORS F a 1"u'
.53: 25510.2
OPTO-ELECTRONIC SWITCHES is [e/ts, g
o High radiant intensity : IE = 30mW/sr (typ.) . , CD E
0 Excellent radiant-intensity linearity. Modulation by pulse (1.2) (1.7) 2
operation and high frequency is possible. 0510.1 1% g
o TPS703 PIN photodiode with resin to acreen out visible light 1 m CE."
available as detector for remote control (2.54)
MAXIMUM RATINGS (Ta = 25°C) g
CHARACTERISTIC SYMBOL RATING UNIT co'
( , : Reference value
Forward Current IF 100 mA
Forward Current Derating AI /0 C 1 33 mA /0 C TOSHIBA 4-6C4
(Ta > 25°C) F - . Weight : 0.32 g (typ.)
Pulse Forward Current IFP(Note) 1 A
Reverse Voltage VR 5 V PIN CONNECTION
Power Pissipation PD 150 n:W 1 2 1. A no de
Operating Temperature Range Topr -20--75 C o-M-o 2. Cathode
Storage Temperature Range Tstg -30--100 "C
(Note) '. Pulse width s 100 ps, repetitive frequency = 100 Hz
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Forward Voltage VF IF = 100 mA - 1.35 1.5 V
Reverse Current IR VR = 5 V - - 10 PA
Radiant Intensity IE IF = 50 mA 15 3O - mW/ sr
Radiant Power Po IF = 50 mA - 9 - mW
Capacitance CT VR = o, f = 1 MHz - 20 - pF
Peak Emission Wavelength AP IF = 50 mA - 940 - nm
Spectral Line Half Width n2 IF = 50mA - 45 - nm
Half Value Angle rl, IF = 50mA - i8 - D
1 2002-03-20
TOSHIBA TLN110
PRECAUTIONS
Please be careful of the followings.
1. Soldering temperature : 260°C max
Soldering time : 5 s max
(Soldering must be performed under the stopper.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 :1.
IE(t) - P0(t)
IE(0) - P0(0)
2 2002-03-20
TOSHIBA TLN110
IF - Ta IFP - VFP (typ.)
ALLOWABLE FORWARD
CURRENT 117 (mA)
0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta (°C)
PULSE FORWARD CURRENT IFp (mA)
IF _ VF (typ.)
3 PULSE WIDTH s 100 ,us
REPETITIVE
FREQUENCY = 100 Hz
Ta = 25°C
Ta = 25''C
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
PULSE FORWARD VOLTAGE Vpp (V)
IE - IF (typ.)
PULSE WIDTH S 100 As
REPETITIVE
FREQUENCY = 100 Hz
Ta = 25°C
FORWARD CURRENT IF (mA)
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
FORWARD VOLTAGE " (V)
AVF/ATa - IF
RADIANT INTENSITY IE (mW/sr)
FORWARD VOLTAGE TEMPERATURE
COEFFICIENT AVF/ATa (mV/°C)
. 1 3 10 30 100 . 1 3 10 30 100 300 1000
FORWARD CURRENT IF (mA) FORWARD CURRENT IF(mA)
3 2002-03-20
TOSHIBA
TLN110
WAVELENGTH CHARACTERIIST§C )
IF = 50 mA
Ta = 25°C
880 900 920 940 960 980 1000
WAVELENGTH A (nm)
RADIATION PATTERN (typ.)
(Ta = 25°C)
9 J' o
20" 10 10 20"
30° 30°
40° 0.8 40°
.0.6, 50°
60 4- 60°
70° 70°
80" 80°
90'' 90°
0 0.2 0.4 0.6 0.8 1.0
RELATIVE INTENSITY
IFP - PW
E Ta = 25°C
E 10 kHz 500 Hz
5kHz 1kHz 200 Hz
10p 30/t 100p 300p 1m 3m 10m
PULSE WIDTH Pw (s)
RELATIVE RADIANT INTENSITY
TPS703 SHORT CIRCUIT CURRENT
Isc VIA)
RELATIVE IE - Ta
-20 0 20 40 60 80
AMBIENT TEMPERATURE Ta (°C)
DISTANCE CHARACTERISTICS
N EAR DISTANCE
IE = 20 mW/sr
IE =10mW/sr
10 100
DISTANCE d (mm)
(typ.)
lllllll
lllllII
lllllll 1
CONVERTED RADIANT INCIDANCE E (mW/cmz)
TOSHIBA TLN110
DISTANCE CHARACTERISTICS -100
LONG DISTANCE
IEP = 200 mW/sr at Ipp~300 mA,
f-- 100 Hz, PW = 100 #5
(mW / cm?)
TPS703 SHORT CIRCUIT CURRENT ISC (,uA)
CONVERTED RADIANT INCIDANCE E
IE = 20 mW/sr at IF~50 mA
0.01 0.1 1 10
DISTANCE d (m)
5 2002-03-20
TOSHIBA TLN110
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
6 2002-03-20
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