TLN105B ,INFRARED LED GaAs INFRARED EMITTERTLN1OSBGaAs INFRARED EMITTERINFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mm0.2REMOTE-CONTROL SYST ..
TLN105B ,INFRARED LED GaAs INFRARED EMITTERTLN1OSBGaAs INFRARED EMITTERINFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mm0.2REMOTE-CONTROL SYST ..
TLN105B(F) ,Infrared LED for sensorsAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 100 mA FFo ..
TLN108 ,INFRARED LED GaAs INFRARED EMITTERTLN108GaAs INFRARED EMITTERTI M102INFRARED LED FOR PHOTOSENSORS Unit : mmOPTO-ELECTRONIC SWITCHESTA ..
TLN110 ,INFRARED LED GaAs INFRARED EMITTERTLN11OGaAs INFRARED EMITTERINFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mmREMOTE-CONTROL SYSTEMSS ..
TLN117 ,INFRARED LED GaAs INFRARED EMITTERTLN117GaAs INFRARED EMITTEROPTO-ELECTRONIC SWITCHES Unit :mmFLOPPY DISK DRIVESOPTICAL MISEOPTICAL T ..
TMP88PS43FG , 8 Bit Microcontroller
TMP88PS43FG , 8 Bit Microcontroller
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP89FH42UG , Microcomputers / Microcomputer Development Systems
TLN105B
INFRARED LED GaAs INFRARED EMITTER
TOSHIBA TLN1OSB
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
TLlNM05B
INFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mm
_iiiHiir]i;i"i',
REMOTE-CONTROL SYSTEMS c, -Q
L. 10.2
SMOKE SENSORS E sf5
OPTO-ELECTRONIC SWITCHES l". E E;
0 High radiant intensity : IE = 20 mW/ sr(typ.) (1.2) (1.7) _
0 Wide half-angle value : " = i23.5° (typ.) 0.5t0.1 mo'Sim ':?
0 Excellent radiant-intensity linearity. Modulation by pulse 1l2.s_a''T-"
operation and high frequency is possible.
0 TPS703 PIN photodiode with filter to screen out visible light i-z'-,.-"-
available as detector for remote control (*) : Include resin tl
build-up
( ) : Reference value
MAXIMUM RATINGS (Ta = 25 C) TOSHIBA 4-6B5
CHARACTERISTIC SYMBOL RATING UNIT Weight : 0.3 g (typ.)
Forward Current IF 100 mA
Forward Current Derating o o
(Ta > 25°C) AIF/ C -1.33 mA/ C
Pulse Forward Current (Note) IFP 1 A
Reverse Voltage VR 5 V
Power Dissipation PD 150 mW PIN CONNECTION
Operating Temperature T0pr -20--75 T
Storage Temperature Tstg -30-100 t 1 o N o 2
(Note) : Pulse width s 100 /IS, repetitive frequency = 100 Hz I. Anode
2. Cathode
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Forward Voltage VF IF = 100mA - 1.35 1.5 V
Reverse Current IR VR = 5 V - - 10 PA
Radiant Intensity IE IF = 50 mA 12 20 - mW/ sr
Radiant Power Po IF = 50 mA - 11 - mW
Capacitance CT VR = 0, f = 1 MHz - 20 - pF
Peak Emission Wavelength AP IF = 50mA - 950 - nm
Spectral Line Half Width AA IF = 50mA - 50 - nm
Half Vaule Angle , IF = 50mA - i235 - t2
1 2002-01-25
TOSHIBA TLN1OSB
PRECAUTIONS
Please be careful of the followings.
Soldering must be performed under the lead stopper.
Soldering temperature : 260°C max
Soldering time : 5 s max
When forming the leads, bend each lead under the stopper without leaving forming stress to the
body of the device. Soldering must be performed after the leads have been formed.
Radiation intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 :1.
IE (t) - P0(t)
IE(0) - Po(0)
2 2002-01-25
TOSHIBA TLN1OSB
A IF - Ta IF - VF (typ.)
< o 20 40 60 80 100 120 140 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
AMBIENT TENPERATURE Ta (°C) FORWARD VOLTAGE VF (V)
AVF/ATa - IF IFP - VFP (typ.)
FORWARD VOLTAGE TEMPERATURE
COEFFICIENT AVF/ATa (mV/°C)
. 1 3 5 10 30 50 100
FORWARD CURRENT IF (mA)
PULSE FORWARD CURRENT IFp
PULSE WIDTH s 100 #3
REPETITIVE FREQUENCY
IFP - PW = 100 Hz
Ta = 25'C
Ta = 25°C
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
PULSE FORWARD VOLTAGE VFP (V)
10k35k 2k 115500 200
3/1 10/1 30p 100p 300p 1m 3m 10m
PULSE WIDTH Pw (s)
ALLOWABLE PULSE FORWARD CURRENT
IFp (mA)
3 2002-01-25
TOSHIBA
IEP - IFP (typ.)
PULSE WIDTH s 100 ps
REPETITIVE FREQUENCY
= 100 Hz
Ta = 2tPC
PULSE RADIANT INTENSITY IEP (mW/sr)
. 1 3 5 10 30 100 300
PULSE FORWARD CURRENT IFP (mA)
DISTANCE CHARACTERISTICS
llllllJ
IE = 20 mW/sr
I llllll
IE = 10 mW/sr
lllllll
TPS703 SHORT CIRCUIT CURRENT ISC (/IA)
1 3 5 10 30 50 100
DISTANCE d (mm)
CONVERTED RADIANT INCIDANCE E (mW/cm2)
RELATIVE RADIANT INTENSITY
TPS'703 SHORT CIRCUIT CURRENT ISC (,uA)
TLN1OSB
RELATIVE IE - Ta (typ.)
IF = 50 mA
_ 40 - 20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
DISTANCE CHARACTERISTICS T 100
IEP = 200 mW/sr at Ipp~300 mA,
f-- 100 Hz, PW = 100 ps
E (mW / cm?)
CONVERTED RADIANT INCIDANCE
IE = 20 mW/sr at IF~50mA
0.01 0.1 1 10
DISTANCE d (m)
TOSHIBA
TLN1OSB
RELATIVE INTENSITY
WAVELENGTH CHARACTERIISTEC
IF=50mA
Ta = 25°C
880 900 920 940 960 980 1000
WAVELENGTH 1 (nm)
RADIATION PATTERN (typ.)
(Ta = 25°C)
'sec-' 900
0 0.2 0.4 0.6 0.8 1.0
RELATIVE INTENSITY
TOSHIBA TLN1OSB
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
6 2002-01-25
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www.loq.com
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