TLN103A ,INFRARED LED FOR PHOTOSENSORSTLN103AGaAs INFRARED EMITTERINFRARED LED FOR PHOTOSENSORS Unit : mmOPTO-ELECTRONIC SWITCHESSELECTOR ..
TLN105B ,INFRARED LED GaAs INFRARED EMITTERTLN1OSBGaAs INFRARED EMITTERINFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mm0.2REMOTE-CONTROL SYST ..
TLN105B ,INFRARED LED GaAs INFRARED EMITTERTLN1OSBGaAs INFRARED EMITTERINFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mm0.2REMOTE-CONTROL SYST ..
TLN105B(F) ,Infrared LED for sensorsAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 100 mA FFo ..
TLN108 ,INFRARED LED GaAs INFRARED EMITTERTLN108GaAs INFRARED EMITTERTI M102INFRARED LED FOR PHOTOSENSORS Unit : mmOPTO-ELECTRONIC SWITCHESTA ..
TLN110 ,INFRARED LED GaAs INFRARED EMITTERTLN11OGaAs INFRARED EMITTERINFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mmREMOTE-CONTROL SYSTEMSS ..
TMP88PS43FG , 8 Bit Microcontroller
TMP88PS43FG , 8 Bit Microcontroller
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP88PU77F , CMOS 8-BIT Microcontroller
TMP89FH42UG , Microcomputers / Microcomputer Development Systems
TLN103A
INFRARED LED FOR PHOTOSENSORS
TOSHIBA
TLN103A
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
TLINM03A
INFRARED LED FOR PHOTOSENSORS
OPTO-ELECTRONIC SWITCHES
SELECTORS
TAPE AND CARD READERS
EQUIPMENT USING INFRARED TRANSMISSION
0 Wide half-angle value
: " = i80° (typ.)
0 Excellent radiant-intensity linearity. Modulation by pulse
operation and high frequency is possible.
0 Same external shape as TPS603A phototransistors
0 Maximum distance when used as photosensor :
with DC drive = 5 mm
with pulse drive = 30 mm
MAXIMUM RATINGS (Ta = 25°C)
j- When TPS603A IL = 100 PA
Unit : mm
ff3.0t02
2.0 10.15
( ) : Reference value
. 0.4 $0.1
11.0mm
TOSHIBA
Weight .' 0.08g (typ.)
PIN CONNECTION
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 60 mA 1 o-M-o 2
2t: Fesziatrd Current (Note) \f-FP 51, () 1. Anode
F(?Viffd C2135; Derating R 2. Cathode
(Ta > 25°C) AIF/ C -0.8 mA/ C
Operating Temperature Range Topr -20--75 T
Storage Temperature Range Tstg -30-100 T
(Note) : Pulse width s 100 ps, repetitive frequency = 100 Hz
OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Forward Voltage VF IF = 10mA 1.00 1.15 1.30 V
Reverse Current IR VR = 5 V - - 10 PA
Radiant Intensity IE IF = 20 mA 0.5 1.0 - mW/ sr
Radiant Power Po IF = 20 mA - 2.5 - mW
Half Value Angle 6 -h IF = 20mA - i80 - o
Capacitance CT VR = 0, f = 1 MHz - 30 - pF
Peak Emission Wavelength ip IF = 20 mA - 940 - nm
Spectral Line Half Width n2 IF = 20mA - 50 - nm
TOSHIBA TLN103A
PRECAUTIONS
Please be careful of the followings.
1. Soldering temperature : 260°C max
Soldering time : 3 s max
(Soldering must be performed 2m from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. Radiation intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 :1.
IE(t) - P0(t)
IE(0) - P0(0)
2 2002-03-20
TOSHIBA
ALLOWABLE FORWARD CURRENT IF (mA)
FORWARD VOLTAGE TEMPERATURE
COEFFICIENT AVF/ATa (mV/°C)
(mW/sr)
RADIANT INTENSITY
IF - Ta
0 20 40 60 80 100
AMBIENT TEMPERATURE Ta CC)
AVF/ATa - IF
0.1 0.3 0.5 1 3 5 10 30 50
FORWARD CURRENT IF (mA)
IE - IF (typ.)
PULSE WIDTH s 100 Ms PULSE
REPETITIVE FRFQUENCY
= 100 Hz
Ta = 25°C
-1 3 5 10
FORWARD CURRENT II? (mA)
30 50 100 300
FORWARD CURRENT IF (mA)
PULSE FORWARD CURRENT IFp (mA)
TLN103A
IF - VF (typ.)
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
FORWARD VOLTAGE " (V)
IFP - VFP (typ.)
PULSE WIDTH s 100 [as
REPETITIVE
FRFQUENCY = 100 Hz
1 Ta = 25°C
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
PULSE FORWARD VOLTAGE Wp (V)
TOSHIBA TLN103A
WAVELENGTH CHARACTERIISTIc
(typ.) RERATIVE IE - Ta (typ.)
IF = 20 mA
Ta = 25''C
RELATIVE RADIANT INTENSITY
RELATIVE INTENSITY
-40 -20 0 20 40 60 80
AMBIENT TEMPERATURE Ta (°C)
860 880 900 920 940 960 980 1000 1020
WAVELENGTH , (nm)
RADIATION PATTERN (typ.) IFP - PW
(Ta = 25°C)
10 2 kHz 500 Hz
5 kHz 1 kHz 200 Hz
0 0.2 0.4 0.6 0.8 1.0
ALLOWABLE PULSE FORWARD CURRENT
IFp (mA)
Op 30/1 100pr 300 1m 3m 10m
RELATIVE INTENSITY PULSE WIDTH PW (s)
4 2002-03-20
TOSHIBA TLN103A
RESTRICTIONS ON PRODUCT USE
000707EAC
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs
dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to
dissolve them. When disposing of the products, follow the appropriate regulations. Do not
dispose of the products with other industrial waste or with domestic garbage.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
O The information contained herein is subject to change without notice.
5 2002-03-20
:
www.loq.com
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