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TLE4913
Hall Sensors
Features • Micro power design
• 2.4 V to 5.5 V battery operation
• High sensitivity and high stability of the
magnetic switching points
• High resistance to mechanical stress
• Digital output signal
• Switching for both poles of a magnet (omnipolar)
Functional Description The TLE4913 is an Integrated Hall-Effect Sensor designed specifically to meet the
requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with
battery operating voltages of 2.4V 5.5V.
Precise magnetic switching points and high temperature stability are achieved through the
unique design of the internal circuit.
An onboard clock scheme is used to reduce the average operating current of the IC.
During the operate phase the IC compares the actual magnetic field detected with the
internally compensated switching points. The output Q is switched at the end of each
operating phase.
During the Stand-by phase the output stage is latched and the current consumption of the
device reduced to some µA.
The IC switching behaviour is Omnipolar, i.e. it can be switched on with either the North or
South pole of a magnet.
Figure 1 Pin Configuration (top view)
Pin Definitions and Functions
Figure 2 Block Diagram
Circuit Description The Low Power Hall IC Switch comprises a Hall probe, bias generator, compensation
circuits, oscillator, output latch and an n-channel open drain output transistor.
The bias generator provides currents for the Hall probe and the active circuits.
Compensation circuits stabilize the temperature behavior and reduce technology variations.
The Active Error Compensation rejects offsets in signal stages and the influence of
mechanical stress to the Hall probe caused by molding and soldering processes and other
thermal stresses in the package. This chopper technique together with the threshold
generator and the comparator ensures high accurate magnetic switching points.
Very low power consumption is achieved with a timing scheme controlled by an oscillator
and a sequencer. This circuitry activates the sensor for 50 µs (typical operating time) sets
the output state after sequential questioning of the switch points and latches it with the
beginning of the following standby phase (max. 200 ms). In the standby phase the average
current is reduced to typical 4 µA. Because of the long standby time compared to the
operating time the overall averaged current is only slightly higher than the standby current.
The output transistor can sink up to 1 mA with a maximal saturation voltage VQSAT.
Absolute Maximum Ratings Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
ESD Protection Human Body Model (HBM) tests according to:
EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7
Operating Range A Ceramic Bypass Capacitor of 100 nF at VS to GND is highly recommended.
AC/DC Characteristics for VS=3.5V the max. Operating Time top max = 85µs includes the Start-up Time tstu for VS=3.5V the max. Standby Time tstb max = 220ms 4) initial power on time. VS must be applied in this time ( typ. 6µs to max. 12µs ) to get already a valid output state after the first operating phase (typ. 56µs). For rise times of VS > 12µs, the output state is valid after the
second operating phase (includes one standby phase), e.g. happens only when the battery in flip phones is changed.
Magnetic Characteristics
1) Positive magnetic fields are related to the approach of a magnetic south pole to the branded side of package
Note: The listed AC/DC and magnetic characteristics are ensured over the operating range
of the integrated circuit. Typical characteristics specify mean values expected over
the production spread. If not other specified, typical characteristics apply at Tj = 25 °C
and VS = 2.7 V
