TLE2161ACD ,Excalibur JFET-Input High-Output-Drive uPower Operational AmplifierTLE2161, TLE2161A, TLE2161BEXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVEμPOWER OPERATIONAL AMPLIFIERSSLOS0 ..
TLE2161CD ,JFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifiermaximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage, V ..
TLE2161CP ,JFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifiermaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
TLE2161ID ,JFET-Input High-Output-Drive Low-Power Decompensated Operational AmplifierTLE2161, TLE2161A, TLE2161BEXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVEμPOWER OPERATIONAL AMPLIFIERSSLOS0 ..
TLE2161IDRG4 ,JFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier 8-SOIC maximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage, V ..
TLE2301INE ,Excalibur 3-State-Output Wide-Bandwidth Power Operational Amplifierfeatures also makes the device3well suited for other high-current applications(e.g., motor drivers ..
TMP82C79P-2 , PROGRAMMABLE KEYBOARD / DISPLAY INTERFACE
TMP82C79P-2 , PROGRAMMABLE KEYBOARD / DISPLAY INTERFACE
TMP82C79P-2 , PROGRAMMABLE KEYBOARD / DISPLAY INTERFACE
TMP82C79P-2 , PROGRAMMABLE KEYBOARD / DISPLAY INTERFACE
TMP86C809NG , 8 Bit Microcontroller
TMP86C845UG , 8 Bit Microcontroller
TLE2161ACD
Excalibur JFET-Input High-Output-Drive uPower Operational Amplifier
Low Supply Current... 280 μA Typ Decompensated for High Slew Rate andGain-Bandwidth Product
AVD = 0.5 Min
Slew Rate = 10 V/μs Typ
Gain-Bandwidth Product = 6.5 MHz Typ Low Offset Voltage Drift With Time
0.04 μV/Month Typ Low Input Bias Current...5 pA Typ
descriptionThe TLE2161, TLE2161A, and TLE2161B are
JFET-input, low-power, precision operational
amplifiers manufactured using the Texas
Instruments Excalibur process. Decompensated
for stability with a minimum closed-loop gain of 5,
these devices combine outstanding output drive
capability with low power consumption, excellent
dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET
advantages of fast slew rates and low input bias
and offset currents, the Excalibur process offers
outstanding parametric stability over time and
temperature. This results in a device that remains
precise even with changes in temperature and
over years of use.
AVAILABLE OPTIONSThe D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
10 k1 k100
RL – Load Resistance – Ω
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
LOAD RESISTANCE
– Maximum Peak-to-Peak Output V
oltage – V
O(PP)
