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TLE2161ACD ,Excalibur JFET-Input High-Output-Drive uPower Operational AmplifierTLE2161, TLE2161A, TLE2161BEXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVEμPOWER OPERATIONAL AMPLIFIERSSLOS0 ..
TLE2161CD ,JFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifiermaximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage, V ..
TLE2161CP ,JFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifiermaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
TLE2161ID ,JFET-Input High-Output-Drive Low-Power Decompensated Operational AmplifierTLE2161, TLE2161A, TLE2161BEXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVEμPOWER OPERATIONAL AMPLIFIERSSLOS0 ..
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TLE2144CDW-TLE2144CDWR
Quad Low-Noise High-Speed Precision Operational Amplifier
TLE214x, TLE214xAEXCALIBUR LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIERS
SLOS183D − FEBRUARY 1997 − REVISED OCTOBER 2012
Low Noise10 Hz... 15 nV/√Hz1 kHz... 10.5 nV/√Hz 10000-pF Load Capability 20-mA Min Short-Circuit Output Current 27-V/μs Min Slew Rate High Gain-Bandwidth Product... 5.9 MHz Low VIO ... 500 μV Max at 25°C Single or Split Supply ...4 V to 44 V Fast Settling Time340 ns to 0.1%400 ns to 0.01% Saturation Recovery... 150 ns Large Output Swing VCC− +0.1 V to VCC+ − 1 V
descriptionThe TLE214x and TLE214xA devices are high-performance, internally compensated operational amplifiersbuilt using Texas Instruments complementary bipolar Excalibur process. The TLE214xA is a tighter offsetvoltage grade of the TLE214x. Both are pin-compatible upgrades to standard industry products.
The design incorporates an input stage that simultaneously achieves low audio-band noise of 10.5 nV/√Hz witha 10-Hz 1/f corner and symmetrical 40-V/μs slew rate typically with loads up to 800 pF. The resulting lowdistortion and high power bandwidth are important in high-fidelity audio applications. A fast settling time of340 ns to 0.1% of a 10-V step with a 2-kΩ/100-pF load is useful in fast actuator/positioning drivers. Under similartest conditions, settling time to 0.01% is 400 ns.
The devices are stable with capacitive loads up to 10 nF, although the 6-MHz bandwidth decreases to 1.8 MHzat this high loading level. As such, the TLE214x and TLE214xA are useful for low-droop sample-and-holds anddirect buffering of long cables, including 4-mA to 20-mA current loops.
The special design also exhibits an improved insensitivity to inherent integrated circuit component mismatchesas is evidenced by a 500-μV maximum offset voltage and 1.7-μV/°C typical drift. Minimum common-moderejection ratio and supply-voltage rejection ratio are 85 dB and 90 dB, respectively.
Device performance is relatively independent of supply voltage over the ±2-V to ±22-V range. Inputs canoperate between VCC− − 0.3 to VCC+ − 1.8 V without inducing phase reversal, although excessive input currentmay flow out of each input exceeding the lower common-mode input range. The all-npn output stage providesa nearly rail-to-rail output swing of VCC− − 0.1 to VCC+ − 1 V under light current-loading conditions. The devicecan sustain shorts to either supply since output current is internally limited, but care must be taken to ensurethat maximum package power dissipation is not exceeded.
Both versions can also be used as comparators. Differential inputs of VCC± can be maintained without damageto the device. Open-loop propagation delay with TTL supply levels is typically 200 ns. This gives a goodindication as to output stage saturation recovery when the device is driven beyond the limits of recommendedoutput swing.
Both the TLE214x and TLE214xA are available in a wide variety of packages, including both theindustry-standard 8-pin small-outline version and chip form for high-density system applications. The C-suffixdevices are characterized for operation from 0°C to 70°C, I-suffix devices from −40°C to 105°C, and M-suffixdevices over the full military temperature range of −55°C to 125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
