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TMM6263FILM ,SMALL SIGNAL SCHOTTKY DIODEABSOLUTE MAXIMUM RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive Peak Reverse Volt ..
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TMMBAT41FILM ,SMALL SIGNAL SCHOTTKY DIODETMMBAT 41®SMALL SIGNAL SCHOTTKY DIODEDESCRIPTIONGeneral purpose metal to silicon diode featuringver ..
TMMBAT42 ,SMALL SIGNAL SCHOTTKY DIODESTMMBAT 42TMMBAT 43®SMALL SIGNAL SCHOTTKY DIODESDESCRIPTIONMINIMELFGeneral purpose, metal to silicon ..
TMMBAT42FILM ,SMALL SIGNAL SCHOTTKY DIODESTMMBAT 42TMMBAT 43®SMALL SIGNAL SCHOTTKY DIODESDESCRIPTIONMINIMELFGeneral purpose, metal to silicon ..
TMMBAT42FILM ,SMALL SIGNAL SCHOTTKY DIODESTMMBAT 42TMMBAT 43®SMALL SIGNAL SCHOTTKY DIODESDESCRIPTIONMINIMELFGeneral purpose, metal to silicon ..
TLC251CDR-TLC251CDRG4-TLC251CP
LinCMOS(TM) Programmable Low-Power Operational Amplifier
Low Noise... 30 nV/√Hz Typ at 1-kHz(High Bias) ESD Protection Exceeds 2000 V Per
MIL-STD-833C, Method 3015.1
descriptionThe TLC251C, TLC251AC, and TLC251BC are
low-cost, low-power programmable operational
amplifiers designed to operate with single or dual
supplies. Unlike traditional metal-gate CMOS
operational amplifiers, these devices utilize Texas
Instruments silicon-gate LinCMOS process,
giving them stable input offset voltages without
sacrificing the advantages of metal-gate CMOS.
This series of parts is available in selected grades of input offset voltage and can be nulled with one external
potentiometer. Because the input common-mode range extends to the negative rail and the power consumption
is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A
bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the
application. The series features operation down to a 1.4-V supply and is stable at unity gain.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in a degradation of the device parametric
performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for the
TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any
circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective
use of these devices. Many features associated with bipolar technology are available with LinCMOS
operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible
equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.
In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers
can have software-controlled performance and power consumption. The TLC251C series is well suited to solve
the difficult problems associated with single battery and solar cell-powered applications.
The TLC251C series is characterized for operation from 0°C to 70°C.
AVAILABLE OPTIONSThe D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are
tested at 25°C.
IN+
VDD–/GND
OUT
OFFSET N2
symbol
OUT
BIAS SELECT
IN+
IN–
OFFSET N1
OFFSET N2
