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TLC336A.. ,Sensitive gate triac, 600V, 3AFEATURESVERY LOW I = 5mA max.GT. LOW I = 15mA maxHDESCRIPTIONThe TLC116 ---> TLC386 T/D/S/A triac f ..
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TLC339CDR ,Quad, Micropower, LinCMOS(TM) Comparator SLCS119B − DECEMBER 1986 − REVISED DECEMBER ..
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TLC226A-TLC226T-TLC336A-TLC336A.-TLC336A..
SENSITIVE GATE TRIACS
TLC116 ---> TLC386
T/D/S/AFebruary 1999 Ed:1A
SENSITIVE GATE TRIACS
Symbol Parameter Value UnitIT(RMS) RMS on-state current
(360° conduction angle)= 40°C3 A= 25°C 1.3 (1)
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)=8.3ms 31.5 A=10ms 30
I2tI2t value tp=10ms 4.5 A2s
dI/dt Criticalrateofriseof on-state current
Gate supply:IG= 50mA diG/dt= 0.1A/μs
Repetitive=50Hz A/μs
Non
Repetitive
Tstg
Storageand operating junction temperature range -40to+15040to+110 Maximum lead temperaturefor soldering during4sat 4.5mm
from case
230 °C
(Plastic) VERY LOWIGT= 5mA max. LOWIH =15mA max
DESCRIPTION
Symbol Parameter TLC Unit
116 T/D/S/A 226 T/D/S/A 336 T/D/S/A 386 T/D/S/AVDRM
VRRM
Repetitive peak off-state
voltage Tj= 110°C
200 400 600 700 V
ABSOLUTE RATINGS (limiting values)
FEATURESThe TLC116 ---> TLC386 T/D/S/A triac family
usesa high performance glass passivated PNPN
technology.
These parts are suitablefor general purposeap-
plications where gate high sensitivityis required.
Applicationon4Q suchas phase control and static
(1)WithCu surface1cm2.A2
1/5
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value UnitRth(j-a) Junctionto ambienton printed circuit withCu surface 1cm2 50 °C/W
Rth(j-l)DC Junction leadsforDC 20 °C/W
Rth(j-l)AC Junction leadsfor 360° conduction angle(F=50Hz) 15 °C/W
Symbol Test Conditions Quadrant Suffix Unit S AIGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 5 5 10 10 mA MAX 5 10 10 25
VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V
tgt VD=VDRMIG= 40mA
dIG/dt= 0.5A/μs
Tj=25°C I-II-III-IV TYP 2 μs IG=1.2IGT Tj=25°C I-III-IV MAX 15 15 25 25 mA 15 15 25 25 *IT= 100mA gate open Tj=25°C MAX 15 15 25 25 mA
VTM *ITM=4A tp= 380μs Tj=25°C MAX 1.85 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.75
dV/dt* Linear slope up to
VD=67%VDRM
gate open
Tj=110°C TYP 10 10 20 20 V/μs
(dV/dt)c* (dI/dt)c= 1.3A/ms Tj=110°C TYP 11 55 V/μsFor either polarityof electrodeA2 voltagewith referenceto electrodeA1. (AV)= 0.1W PGM =2W(tp =20μs) IGM =1A(tp =20μs) VGM= 16V(tp=20μs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TLC116 T/D/S/A ---> TLC386 T/D/S/A2/5
Package IT(RMS) VDRM /VRRM Sensitivity Specification T D S ATLC..6 3 200 X X X X
400 XX XX
600 XX XX
700 XX XX
ORDERING INFORMATION
Fig.1: Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curvesarecutoffby (dI/dt)c limitation)
Fig.2: Correlation between maximum RMS power
dissipationand maximum allowable temperatures (Tamb
and Tlead).
Fig.3: RMS on-state current versus case temperature.
Fig.4: Thermal transient impedance junctionto case
and junctionto ambient versus pulse duration.
TLC116 T/D/S/A ---> TLC386 T/D/S/A3/5
Fig.5: Relative variationof gate trigger current and
holding current versus junction temperature.
Fig.6: Non Repetitive surge peak on-state current
versus numberof cycles.
Fig.7: Non repetitive surge peak on-state currentfora
sinusoidal pulse with width:t ≤ 10ms, and
corresponding valueofI2t.
Fig.8: On-state characteristics (maximum values).
TLC116 T/D/S/A ---> TLC386 T/D/S/A4/5
PACKAGE MECHANICAL DATA Plastic
Marking:type number
Weight:0.75g
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 9.55 10.05 0.375 0.396
7.55 8.05 0.297 0.317
12.70 0.500
4.25 4.75 0.167 0.187
1.25 1.75 0.049 0.069
6.75 7.25 0.266 0.285
4.50 0.177
2.04 3.04 0.80 0.120
0.75 0.85 0.029 0.033
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TLC116 T/D/S/A ---> TLC386 T/D/S/A5/5
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