TK9A55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK9A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TL022CP ,Dual Low-Power General-Purpose Operational Amplifier TL022C, TL022M DUAL LOW-POWER OPERATIONAL AMPLIFIERS SLOS076 – SEPTEMBER 1973 – REVISED SEPTEMBER ..
TL022CPSR ,Dual Low-Power General-Purpose Operational Amplifiermaximum ratings over operating free-air temperature range (unless otherwise noted)TL022C TL022M UNI ..
TL026 ,Differential High-Frequency Amplifier With AGCmaximum ratings may cause permanent damage to the device. This is a stress rating only, andfunction ..
TL026CD ,Differential High-Frequency Amplifier With AGCTL026C DIFFERENTIAL HIGH-FREQUENCY AMPLIFIER WITH AGC SLFS007A – JUNE 1985 – REVISED JULY 1990D OR ..
TLRE1002A , Toshiba TLxE1002A SMT LEDs
TLRE1002A , Toshiba TLxE1002A SMT LEDs
TLRE1005A ,LED LAMPTOSHIBA TICM005A(T03)TLRE1 005A (T03), TLOE1 005A (T03), TLYE1 005A (T03), TLSU1 005A (T03)TLOU1 00 ..
TLRE1005A ,LED LAMPTOSHIBA TICM005A(T03)TLRE1 005A (T03), TLOE1 005A (T03), TLYE1 005A (T03), TLSU1 005A (T03)TLOU1 00 ..
TLRE1100 ,Toshiba LED lamp. Color red. Peak emission wavelength(typ) @20mA 644 nm. Luminous intensity @20mA 47.6(min), 100(typ) mcd.TOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TLRE1100 ,Toshiba LED lamp. Color red. Peak emission wavelength(typ) @20mA 644 nm. Luminous intensity @20mA 47.6(min), 100(typ) mcd.TOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TK9A55DA
Power MOSFET (N-ch 500V<VDSS≤700V)
TK9A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK9A55DA Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.68 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.7 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement-mode: Vth = 2 to 4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.04 mH, RG = 25 Ω, IAR = 8.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
