TK9A20DA ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK9A45D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK9A55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK9A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TL022CP ,Dual Low-Power General-Purpose Operational Amplifier TL022C, TL022M DUAL LOW-POWER OPERATIONAL AMPLIFIERS SLOS076 – SEPTEMBER 1973 – REVISED SEPTEMBER ..
TL022CPSR ,Dual Low-Power General-Purpose Operational Amplifiermaximum ratings over operating free-air temperature range (unless otherwise noted)TL022C TL022M UNI ..
TLRE1002A , Toshiba TLxE1002A SMT LEDs
TLRE1002A , Toshiba TLxE1002A SMT LEDs
TLRE1005A ,LED LAMPTOSHIBA TICM005A(T03)TLRE1 005A (T03), TLOE1 005A (T03), TLYE1 005A (T03), TLSU1 005A (T03)TLOU1 00 ..
TLRE1005A ,LED LAMPTOSHIBA TICM005A(T03)TLRE1 005A (T03), TLOE1 005A (T03), TLYE1 005A (T03), TLSU1 005A (T03)TLOU1 00 ..
TLRE1100 ,Toshiba LED lamp. Color red. Peak emission wavelength(typ) @20mA 644 nm. Luminous intensity @20mA 47.6(min), 100(typ) mcd.TOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TLRE1100 ,Toshiba LED lamp. Color red. Peak emission wavelength(typ) @20mA 644 nm. Luminous intensity @20mA 47.6(min), 100(typ) mcd.TOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TK9A20DA
Power MOSFET (N-ch 150V<VDSS≤250V)
TK9A20DA
MOSFETs Silicon N-Channel MOS (π-MOS)
TK9A20DATK9A20DATK9A20DATK9A20DA
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
