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TK9A20DA from Toshiba

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TK9A20DA

Manufacturer: Toshiba

Power MOSFET (N-ch 150V<VDSS≤250V)

Partnumber Manufacturer Quantity Availability
TK9A20DA Toshiba 30000 In Stock

Description and Introduction

Power MOSFET (N-ch 150V<VDSS≤250V) The TK9A20DA is a Toshiba-manufactured IGBT (Insulated Gate Bipolar Transistor) module. Below are its key specifications, descriptions, and features based on available information:

### **Specifications:**
- **Voltage Rating (VCES):** 600V  
- **Current Rating (IC):** 20A  
- **Power Dissipation (PC):** 100W  
- **Package Type:** Module  
- **Configuration:** Single IGBT with diode  
- **Gate-Emitter Voltage (VGE):** ±20V  
- **Collector-Emitter Saturation Voltage (VCE(sat)):** 1.8V (typical)  
- **Switching Speed:** Fast switching capability  

### **Descriptions:**
- Designed for high-efficiency power switching applications.  
- Suitable for inverters, motor drives, and industrial power supplies.  
- Includes a freewheeling diode for improved performance in inductive load applications.  

### **Features:**
- Low saturation voltage for reduced conduction losses.  
- High-speed switching for improved efficiency.  
- Built-in temperature sensor (NTC thermistor) for thermal protection.  
- Robust construction for industrial environments.  

For exact details, always refer to Toshiba's official datasheet.

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