TK7P50D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 0.76 ± 0.12 Characteristics Symbol Rating Unit Dr ..
TK7P60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK7Q60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK80E06K3A ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK80F08K3 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) 1.1 0.76 ± 0.1 Characteristics Symbol Rating Unit 2.35 ± 0.1 0 ..
TK80S04K3L ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLR346T ,LED DISPLAY
TLR346T ,LED DISPLAY
TLR347T ,LED DISPLAY
TLR358 ,LED DISPLAY
TLR362T ,LED DISPLAY
TLR366T ,LED DISPLAY
TK7P50D
Power MOSFET (N-ch 250V<VDSS≤500V)
TK7P50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK7P50D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.64 mH, RG = 25 Ω, IAR = 7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 0.36 g (typ.)
