TK7A45DA ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK7A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 3.57 ..
TK7A55D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 3.57 ..
TK7A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK7A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK7A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics 2 Characteristics Symbol Max UnitThermal resistance, channel to case R 2.78 ..
TLP921 ,Photoreflective Sensor Infrared LED + Phototransistor
TLPGE1100 ,LEDTOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TLPGE1100 ,LEDTOSHIBA TL(RE,SE,OE,YE,GE,PGE)1100(T11)TLRE1 100 (T1 1), TLSE1 100 (T1 1), TLOE1 100 (T1 1)TLYE1 10 ..
TLPGF1060 , Panel Circuit Indicator
TLR346T ,LED DISPLAY
TLR346T ,LED DISPLAY
TK7A45DA
Power MOSFET (N-ch 250V<VDSS≤500V)
TK7A45DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK7A45DA Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.2 mH, RG = 25 Ω, IAR = 6.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
