TK6A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 2.78 ..
TK6P53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 ± 0.12 Dr ..
TK6P53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 1.25 ..
TK6P60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK6Q60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK71220MTL ,LOW DROPOUT REGULATOR
TLP665G ,Photocoupler GaAs Ired & Photo .TriacTLP665G TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665G Office Machine Unit in mmHousehold ..
TLP665GF ,Photocoupler GaAlAs Ired & Photo .TriacTLP665GF TOSHIBA Photocoupler GaAℓAs Ired & Photo−Triac TLP665GF Office Machine Unit in mmHouse ..
TLP665J ,Photocoupler GaAs IRed&Photo-TriacTLP665J TOSHIBA Photocoupler GaAs IRed&Photo-Triac TLP665J Office Machine Unit in mmHousehold Us ..
TLP665JF ,PHOTOCOUPLER GaAs IRED & PHOTO-TRIACTLP665JF TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665JF Office Machine Unit in mmHouseho ..
TLP665JF ,PHOTOCOUPLER GaAs IRED & PHOTO-TRIACTLP665JF TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665JF Office Machine Unit in mmHouseho ..
TLP666G ,Photo Coupler GaAs Ired & Photo .TriacTLP666G TOSHIBA Photo Coupler GaAs Ired & Photo−Triac TLP666G Office machine Unit in mmHousehol ..
TK6A65D
Power MOSFET (N-ch 500V<VDSS≤700V)
TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK6A65D Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 13.8 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
