TK6A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Ф0.2 M A 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK6A53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK6A55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK6A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 3.125 ..
TK6A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK6A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 2.78 ..
TLP665G ,Photocoupler GaAs Ired & Photo .TriacTLP665G TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665G Office Machine Unit in mmHousehold ..
TLP665GF ,Photocoupler GaAlAs Ired & Photo .TriacTLP665GF TOSHIBA Photocoupler GaAℓAs Ired & Photo−Triac TLP665GF Office Machine Unit in mmHouse ..
TLP665J ,Photocoupler GaAs IRed&Photo-TriacTLP665J TOSHIBA Photocoupler GaAs IRed&Photo-Triac TLP665J Office Machine Unit in mmHousehold Us ..
TLP665JF ,PHOTOCOUPLER GaAs IRED & PHOTO-TRIACTLP665JF TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665JF Office Machine Unit in mmHouseho ..
TLP665JF ,PHOTOCOUPLER GaAs IRED & PHOTO-TRIACTLP665JF TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665JF Office Machine Unit in mmHouseho ..
TLP666G ,Photo Coupler GaAs Ired & Photo .TriacTLP666G TOSHIBA Photo Coupler GaAs Ired & Photo−Triac TLP666G Office machine Unit in mmHousehol ..
TK6A50D
Power MOSFET (N-ch 500V<VDSS≤700V)
TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK6A50D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.8 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 1.7 g (typ.)
