TK6A45DA ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK6A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Ф0.2 M A 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK6A53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK6A55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK6A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 3.125 ..
TK6A60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TLP665G ,Photocoupler GaAs Ired & Photo .TriacTLP665G TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665G Office Machine Unit in mmHousehold ..
TLP665GF ,Photocoupler GaAlAs Ired & Photo .TriacTLP665GF TOSHIBA Photocoupler GaAℓAs Ired & Photo−Triac TLP665GF Office Machine Unit in mmHouse ..
TLP665J ,Photocoupler GaAs IRed&Photo-TriacTLP665J TOSHIBA Photocoupler GaAs IRed&Photo-Triac TLP665J Office Machine Unit in mmHousehold Us ..
TLP665JF ,PHOTOCOUPLER GaAs IRED & PHOTO-TRIACTLP665JF TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665JF Office Machine Unit in mmHouseho ..
TLP665JF ,PHOTOCOUPLER GaAs IRED & PHOTO-TRIACTLP665JF TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP665JF Office Machine Unit in mmHouseho ..
TLP666G ,Photo Coupler GaAs Ired & Photo .TriacTLP666G TOSHIBA Photo Coupler GaAs Ired & Photo−Triac TLP666G Office machine Unit in mmHousehol ..
TK6A45DA
Power MOSFET (N-ch 250V<VDSS≤500V)
TK6A45DA
MOSFETs Silicon N-Channel MOS (π-MOS)
TK6A45DATK6A45DATK6A45DATK6A45DA
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 1.1 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 3.0 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)
(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
