TK5A65DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK5P50D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 ± 0.12 Dr ..
TK5P50D ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 1.56 ..
TK5P53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 ± 0.12 Dr ..
TK5P60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK5Q60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorPin Configurations (top view)TLP628-4TLP628 TLP628-2 1 16 1 4 1 8 2 2 15 2 7 3 1: Anode 3 6 3 14 ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorTLP628,TLP628−2,TLP628−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP628,TLP628−2,TLP628 ..
TLP628-3 , 12PIN DIP 3-CHANNELS TYPE
TLP629 ,Photocoupler GaAs Ired & Photo -TransistorTLP629,TLP629−2,TLP629−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP629,TLP629−−−−2,TLP ..
TLP629-2 ,Photocoupler GaAs Ired & Photo -TransistorTLP629,TLP629−2,TLP629−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP629,TLP629−−−−2,TLP ..
TLP630 ,Photocoupler GaAs Ired & Photo -TransistorTLP630 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP630 Unit in mmProgrammable Controll ..
TK5A65DA
Power MOSFET (N-ch 500V<VDSS≤700V)
TK5A65DA
MOSFETs Silicon N-Channel MOS (π-MOS)
TK5A65DATK5A65DATK5A65DATK5A65DA
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 3.1 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
