TK5A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 3.125 ..
TK5A65DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK5P50D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 ± 0.12 Dr ..
TK5P50D ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 1.56 ..
TK5P53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 ± 0.12 Dr ..
TK5P60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorPin Configurations (top view)TLP628-4TLP628 TLP628-2 1 16 1 4 1 8 2 2 15 2 7 3 1: Anode 3 6 3 14 ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorTLP628,TLP628−2,TLP628−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP628,TLP628−2,TLP628 ..
TLP628-3 , 12PIN DIP 3-CHANNELS TYPE
TLP629 ,Photocoupler GaAs Ired & Photo -TransistorTLP629,TLP629−2,TLP629−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP629,TLP629−−−−2,TLP ..
TLP629-2 ,Photocoupler GaAs Ired & Photo -TransistorTLP629,TLP629−2,TLP629−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP629,TLP629−−−−2,TLP ..
TLP630 ,Photocoupler GaAs Ired & Photo -TransistorTLP630 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP630 Unit in mmProgrammable Controll ..
TK5A65D
Power MOSFET (N-ch 500V<VDSS≤700V)
TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK5A65D Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.4 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 1.7 g (typ.)
