TK50F15J1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwis ..
TK50P03M1 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK50P04M1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TK50S04K3L ,Power MOSFET (N-ch single 30V<VDSS≤60V)
TK56A12N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)
TK56E12N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)
TLP627-2 ,PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORPIN CONFIGURATION (TOP VIEW) Weight: 0.54 g TLP627 TLP627-2 TLP627-4 8 1 4 1 1 162 7 2 152 3 6 1: A ..
TLP627-4 ,PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORPIN CONFIGURATION (TOP VIEW) Weight: 0.54 g TLP627 TLP627-2 TLP627-4 8 1 4 1 1 162 7 2 152 3 6 1: A ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorPin Configurations (top view)TLP628-4TLP628 TLP628-2 1 16 1 4 1 8 2 2 15 2 7 3 1: Anode 3 6 3 14 ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorTLP628,TLP628−2,TLP628−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP628,TLP628−2,TLP628 ..
TLP628-3 , 12PIN DIP 3-CHANNELS TYPE
TLP629 ,Photocoupler GaAs Ired & Photo -TransistorTLP629,TLP629−2,TLP629−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP629,TLP629−−−−2,TLP ..
TK50F15J1
Power MOSFET (N-ch single 60V<VDSS≤150V)
TK50F15J1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK50F15J1TK50F15J1TK50F15J1TK50F15J1
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators DC-DC Converters
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
