TK4A60DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 600 ..
TK4A60DB ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics 2 Characteristics Symbol Max UnitThermal resistance, channel to case R 3.57 ..
TK4A65DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK4P50D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 Characteristics Symbol Rating Unit 0.76 ± 0.12 Dr ..
TK4P55D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 1.14MAX 2.29 0.76 ± 0.12 Characteristics Symbol Rating Unit Dr ..
TK4P55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 2.29 0.76 ± 0.12 Characteristics Symbol Rating Unit Drain-sour ..
TLP626-2 ,Photocoupler GaAs Ired & Photo -TransistorElectrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min.Typ. Max. UnitForwa ..
TLP626-4 ,6V; 50mA optically coupled isolatorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. UnitI ..
TLP627 ,PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORTLP627,TLP627-2,TLP627-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP627,TLP627-2,TLP627 ..
TLP627-2 ,PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORPIN CONFIGURATION (TOP VIEW) Weight: 0.54 g TLP627 TLP627-2 TLP627-4 8 1 4 1 1 162 7 2 152 3 6 1: A ..
TLP627-4 ,PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTORPIN CONFIGURATION (TOP VIEW) Weight: 0.54 g TLP627 TLP627-2 TLP627-4 8 1 4 1 1 162 7 2 152 3 6 1: A ..
TLP628 ,Photocoupler GaAs Ired & Photo -TransistorPin Configurations (top view)TLP628-4TLP628 TLP628-2 1 16 1 4 1 8 2 2 15 2 7 3 1: Anode 3 6 3 14 ..
TK4A60DA
Power MOSFET (N-ch 500V<VDSS≤700V)
TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DA Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 22.5 mH, RG = 25 Ω, IAR = 3.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 1.7 g (typ.)
