TK46E08N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK4A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 500 ..
TK4A53D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK4A55D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK4A55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK4A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 600 ..
TLP624-4 ,5V; 50mA low input current phototransistor optically coupled isolatorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624BV , Programmable Controllers AC/DC−Input Module Telecommunication
TLP624BV , Programmable Controllers AC/DC−Input Module Telecommunication
TLP626 ,6V; 50mA optically coupled isolator TLP626,TLP626-2,TLP626-4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP626,TLP626-2,TLP62 ..
TLP626 ,6V; 50mA optically coupled isolatorPin Configuration (top view) TLP626 TLP626–2 TLP626–4 1 1 14 8 163 7 152 2 23 36 141 : Anode Catho ..
TLP626-2 ,Photocoupler GaAs Ired & Photo -TransistorElectrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min.Typ. Max. UnitForwa ..
TK46E08N1
Power MOSFET (N-ch single 60V<VDSS≤150V)
TK46E08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK46E08N1TK46E08N1TK46E08N1TK46E08N1
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
