TK40P03M1 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK40P04M1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK40S10K3Z ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK42A12N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK42E12N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK45P03M1 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP624 ,Photocoupler GaAs Ired & Photo -TransistorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624-2 ,5V; 50mA low input current phototransistor optically coupled isolatorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit1 ..
TLP624-3 , 12PIN DIP 3-CHANNELS TYPE
TLP624-4 ,5V; 50mA low input current phototransistor optically coupled isolatorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624BV , Programmable Controllers AC/DC−Input Module Telecommunication
TLP624BV , Programmable Controllers AC/DC−Input Module Telecommunication
TK40P03M1
Power MOSFET (N-ch single VDSS≤30V)
TK40P03M1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK40P03M1TK40P03M1TK40P03M1TK40P03M1
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications DC-DC Converters Desktop PCs
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) High-speed switching
(2) Low gate charge: QSW = 5.7 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 8.3 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
