TK40A10K3 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 100 ..
TK40A10N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK40E06N1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK40E10N1 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK40J60T , Field Effect Transistor Silicon N Channel MOS Type (DTMOS)
TK40P03M1 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP624 ,Photocoupler GaAs Ired & Photo -TransistorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624-2 ,5V; 50mA low input current phototransistor optically coupled isolatorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit1 ..
TLP624-3 , 12PIN DIP 3-CHANNELS TYPE
TLP624-4 ,5V; 50mA low input current phototransistor optically coupled isolatorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624BV , Programmable Controllers AC/DC−Input Module Telecommunication
TLP624BV , Programmable Controllers AC/DC−Input Module Telecommunication
TK40A10K3
Power MOSFET (N-ch single 60V<VDSS≤150V)
TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK40A10K3 Switching Regulator Application Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel & lead temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C, L = 100 μH, IAR = 40 A, RG = 1 Ω
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Handle with care.
Weight: 1.7 g (typ.)
