TK25E06K3 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK2A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK2P60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.8 MAX. 0.6 MAX.1.05 MAX. 0.6 ± 0.15 Characteristics Symbol R ..
TK30A06J3A ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics 2Characteristics Symbol Max Unit Thermal resistance, channel to case R 5.0 ..
TK30A06N1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK30E06N1 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TLP621-2 ,6V; 50mA optically coupled isolatorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP621-3 ,Photocoupler
TLP621-3 ,Photocoupler
TLP621-4 ,Photocoupler GaAs Ired & Photo -TransistorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP624 ,Photocoupler GaAs Ired & Photo -TransistorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624-2 ,5V; 50mA low input current phototransistor optically coupled isolatorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit1 ..
TK25E06K3
Power MOSFET (N-ch single 30V<VDSS≤60V)
TK25E06K3
MOSFETs Silicon N-channel MOS (U-MOS)
TK25E06K3TK25E06K3TK25E06K3TK25E06K3
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.)
(2) High forward transfer admittance: |Yfs| = 50 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Ta
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
