TK25A10K3 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 100 ..
TK25A20D ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK25E06K3 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise s ..
TK2A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK2P60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) 0.8 MAX. 0.6 MAX.1.05 MAX. 0.6 ± 0.15 Characteristics Symbol R ..
TK30A06J3A ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics 2Characteristics Symbol Max Unit Thermal resistance, channel to case R 5.0 ..
TLP621-2 ,6V; 50mA optically coupled isolatorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP621-3 ,Photocoupler
TLP621-3 ,Photocoupler
TLP621-4 ,Photocoupler GaAs Ired & Photo -TransistorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TLP624 ,Photocoupler GaAs Ired & Photo -TransistorTLP624,TLP6242,TLP6244 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−−−−2,TL ..
TLP624-2 ,5V; 50mA low input current phototransistor optically coupled isolatorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit1 ..
TK25A10K3
Power MOSFET (N-ch single 60V<VDSS≤150V)
TK25A10K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK25A10K3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 100 μH, RG = 25 Ω, IAR = 25 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Thermal Characteristics This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 1.7 g (typ.)
