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TK1Q90ATOSHIBAN/a120000avaiPower MOSFET (N-ch 700V<VDSS)


TK1Q90A ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK20A20D ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK20A25D ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK20A60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 2.78 ..
TK20E60U ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK20H50C ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 500 ..
TLP620-2 ,Photocoupler GaAs Ired & Photo .TransistorTLP620,TLP620−2,TLP620−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP620, TLP620−2, TLP6 ..
TLP620-3 ,Photocoupler
TLP620-4 ,Photocoupler GaAs Ired & Photo .TransistorTLP620,TLP620−2,TLP620−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP620, TLP620−2, TLP6 ..
TLP620-4GB , Programmable Controllers AC / DC−Input Module Telecommunication
TLP620-4GB , Programmable Controllers AC / DC−Input Module Telecommunication
TLP621 ,Photocoupler GaAs Ired & Photo -TransistorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..


TK1Q90A
Power MOSFET (N-ch 700V<VDSS)
TK1Q90A
MOSFETs Silicon N-Channel MOS (π-MOS)
TK1Q90ATK1Q90ATK1Q90ATK1Q90A
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 1.0 S (typ.)
(3) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25  unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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