TK18A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 2.5 ° ..
TK18E10K3 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK19A45D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 M A Ф0.2 Characteristics Symbol Rating Unit 2.54 2 ..
TK1-L2-4.5V , ULTRA LOW PROFILE 2 AMP. POLARIZED RELAY
TK1Q90A ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK20A20D ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TLP620-2 ,Photocoupler GaAs Ired & Photo .TransistorTLP620,TLP620−2,TLP620−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP620, TLP620−2, TLP6 ..
TLP620-3 ,Photocoupler
TLP620-4 ,Photocoupler GaAs Ired & Photo .TransistorTLP620,TLP620−2,TLP620−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP620, TLP620−2, TLP6 ..
TLP620-4GB , Programmable Controllers AC / DC−Input Module Telecommunication
TLP620-4GB , Programmable Controllers AC / DC−Input Module Telecommunication
TLP621 ,Photocoupler GaAs Ired & Photo -TransistorTLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−−−−2,TLP ..
TK18A50D
Power MOSFET (N-ch 500V<VDSS≤700V)
TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK18A50D Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.8 mH, RG = 25 Ω, IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
