TK16H60C ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V ..
TK1-6V , ULTRA LOW PROFILE 2 AMP. POLARIZED RELAY
TK17A25D ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK17A65U ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK18A30D ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK18A50D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 2.5 ° ..
TLP597G ,Photocoupler Photo Relay
TLP597G ,Photocoupler Photo Relay
TLP597GA ,Photocoupler Photo Relay
TLP597GA. ,Photocoupler Photo Relay
TLP598GA ,Photorelay (MOSFET output, 1-form-a)
TLP599G ,Photocoupler Photo RelayPin Configuration (top view) Classification (mA) Marking Of (Note 1) @I = 120mA Classification ONM ..
TK16H60C
Power MOSFET (N-ch 500V<VDSS≤700V)
TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK16H60C Switching Regulator Applications
z Low drain−source ON resistance : RDS (ON) = 0. 32 Ω (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.69 mH, RG = 25 Ω, IAR = 16 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 3.8 g (typ.)
