TK16A60W5 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK16C60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK16E60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK16G60W ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK16H60C ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V ..
TK1-6V , ULTRA LOW PROFILE 2 AMP. POLARIZED RELAY
TLP597G ,Photocoupler Photo Relay
TLP597G ,Photocoupler Photo Relay
TLP597GA ,Photocoupler Photo Relay
TLP597GA. ,Photocoupler Photo Relay
TLP598GA ,Photorelay (MOSFET output, 1-form-a)
TLP599G ,Photocoupler Photo RelayPin Configuration (top view) Classification (mA) Marking Of (Note 1) @I = 120mA Classification ONM ..
TK16A60W5
Power MOSFET (N-ch 500V<VDSS≤700V)
TK16A60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK16A60W5TK16A60W5TK16A60W5TK16A60W5
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Fast reverse recovery time: trr = 100 ns (typ.)
(2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.)
by using Super Junction Structure : DTMOS
(3) Easy to control Gate switching
(4) Enhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID = 0.79 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
