TK13A55DA ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) M A Ф0.2 2.54 2.54 Characteristics Symbol Rating Unit 1 2 3 ..
TK13A60D ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 2.5 ° ..
TK13A65D ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TK13A65U ,Power MOSFET (N-ch 500V<VDSS≤700V)Thermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 3.125 ..
TK13E25D ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TK13H90A1 , Swiching Regulator Applications
TLP548J ,Photocoupler (photothyristor output)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 50 mA FFor ..
TLP549J ,Photocoupler (photothyristor output)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I 50 mA FFor ..
TLP550 ,Photocoupler Infrared LED + Photo ICTLP550 TOSHIBA Photocoupler Infrared LED Photo IC +TLP550 Degital Logic Isolation Unit in mm Li ..
TLP551 ,Photocoupler GaAs IRED + Photo ICTLP551DIGITAL LOGIC GROUND ISOLATION Unit in mmLINE RECEIVERMICROPROCFSSOR SYSTFM INTERFACES:EEDBAC ..
TLP552 ,Photocoupler (photo-IC output)TLP552 TOSHIBA Photocoupler GaAℓAs IRED & Photo IC TLP552 Isolated Line Receiver Unit: mmSimple ..
TLP553 ,Photocoupler (photo-IC output)Pin Configurations 1: N.C. 5: GND(emitter) 2: Anode 6: V (collector) O3: Cathode 7: Base 4: N.C. ..
TK13A55DA
Power MOSFET (N-ch 500V<VDSS≤700V)
TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A55DA Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.32 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1:Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 3.42 mH, RG = 25 Ω, IAR = 12.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 1.7 g (typ.)
